|
NTMFS4C05N даташитФункция этой детали – «Power Mosfet ( Transistor )». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
NTMFS4C05N | ON Semiconductor |
Power MOSFET ( Transistor ) NTMFS4C05N
Power MOSFET
30 V, 78 A, Single N−Channel, SO−8 FL
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• CPU Power Delivery • DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Curr |
Это результат поиска, начинающийся с "4C05N", "NTMFS4C" |
Номер в каталоге | Производители | Описание | |
NTTFS4C05N | ON Semiconductor |
Power MOSFET ( Transistor ) NTTFS4C05N Power MOSFET
Features
30 V, 75 A, Single N−Channel, m8FL
• • • •
Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are |
|
NTTFS4C05NTAG | ON Semiconductor |
Power MOSFET ( Transistor ) NTTFS4C05N Power MOSFET
Features
30 V, 75 A, Single N−Channel, m8FL
• • • •
Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are |
|
NTTFS4C05NTWG | ON Semiconductor |
Power MOSFET ( Transistor ) NTTFS4C05N Power MOSFET
Features
30 V, 75 A, Single N−Channel, m8FL
• • • •
Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are |
|
NVMFS4C05N | ON Semiconductor |
Power MOSFET ( Transistor ) NVMFS4C05N
Power MOSFET
30 V, 116 A, Single N−Channel, SO−8 FL
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVMFS4C05NWF − Wettable Flanks Option for Enhanced |
|
NVMFS4C05NT1G | ON Semiconductor |
Power MOSFET ( Transistor ) NVMFS4C05N
Power MOSFET
30 V, 116 A, Single N−Channel, SO−8 FL
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVMFS4C05NWF − Wettable Flanks Option for Enhanced |
|
NVMFS4C05NT3G | ON Semiconductor |
Power MOSFET ( Transistor ) NVMFS4C05N
Power MOSFET
30 V, 116 A, Single N−Channel, SO−8 FL
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVMFS4C05NWF − Wettable Flanks Option for Enhanced |
[1]  
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |