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NTMFS4C05N даташит

Функция этой детали – «Power Mosfet ( Transistor )».



Показать результаты поиска

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Номер в каталоге Производители Описание PDF
NTMFS4C05N ON Semiconductor
ON Semiconductor
  Power MOSFET ( Transistor )

NTMFS4C05N Power MOSFET 30 V, 78 A, Single N−Channel, SO−8 FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • CPU Power Delivery • DC−DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Curr
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Это результат поиска, начинающийся с "4C05N", "NTMFS4C"

Номер в каталоге Производители Описание PDF
NTTFS4C05N ON Semiconductor
ON Semiconductor

Power MOSFET ( Transistor )

NTTFS4C05N Power MOSFET Features 30 V, 75 A, Single N−Channel, m8FL • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are
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NTTFS4C05NTAG ON Semiconductor
ON Semiconductor

Power MOSFET ( Transistor )

NTTFS4C05N Power MOSFET Features 30 V, 75 A, Single N−Channel, m8FL • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are
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NTTFS4C05NTWG ON Semiconductor
ON Semiconductor

Power MOSFET ( Transistor )

NTTFS4C05N Power MOSFET Features 30 V, 75 A, Single N−Channel, m8FL • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are
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NVMFS4C05N ON Semiconductor
ON Semiconductor

Power MOSFET ( Transistor )

NVMFS4C05N Power MOSFET 30 V, 116 A, Single N−Channel, SO−8 FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVMFS4C05NWF − Wettable Flanks Option for Enhanced
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NVMFS4C05NT1G ON Semiconductor
ON Semiconductor

Power MOSFET ( Transistor )

NVMFS4C05N Power MOSFET 30 V, 116 A, Single N−Channel, SO−8 FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVMFS4C05NWF − Wettable Flanks Option for Enhanced
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NVMFS4C05NT3G ON Semiconductor
ON Semiconductor

Power MOSFET ( Transistor )

NVMFS4C05N Power MOSFET 30 V, 116 A, Single N−Channel, SO−8 FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVMFS4C05NWF − Wettable Flanks Option for Enhanced
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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