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NTMFS5C612NL даташит

Функция этой детали – «Power Mosfet ( Transistor )».



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Номер в каталоге Производители Описание PDF
NTMFS5C612NL ON Semiconductor
ON Semiconductor
  Power MOSFET ( Transistor )

NTMFS5C612NL Power MOSFET 60 V, 1.5 mW, 235 A, Single N−Channel Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NTMFS5C612NLWF − Wettable Flank Option for Enhanced Optical Inspection • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJC
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Это результат поиска, начинающийся с "5C612NL", "NTMFS5C61"

Номер в каталоге Производители Описание PDF
NVMFS5C612NL ON Semiconductor
ON Semiconductor

Power MOSFET ( Transistor )

NVMFS5C612NL Power MOSFET 60 V, 1.5 mW, 235 A, Single N−Channel Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS5C612NLWF − Wettable Flank Option for Enhanced
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1N5612 Microsemi
Microsemi

Voidless Hermetically Sealed Unidirectional Transient Voltage Suppressors

1N5610 thru 1N5613 Available on commercial versions Voidless Hermetically Sealed Unidirectional Transient Voltage Suppressors Qualified per MIL-PRF-19500/434 DESCRIPTION This series of industry recognized voidless hermetically sealed unidirectional Transient Voltage Suppresso
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1N5612 New Jersey Semiconductor
New Jersey Semiconductor

Diode TVS Single Uni-Dir 49V 1.5KW 2-Pin Case G

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2N5612 SavantIC
SavantIC

(2N5606 - 2N5612) Silicon NPN Power Transistors

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N5606 2N5608 2N5610 2N5612 DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For general-purpose amplifier ; and sw
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2N5612 Seme LAB
Seme LAB

Bipolar NPN Device

2N5612 Dimensions in mm (inches). 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340) Bipolar NPN Device in a Hermetically sealed TO66 Metal Package. Bipolar NPN Device. VCEO = 100V IC = 5A 24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590
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2N5612A SavantIC
SavantIC

Silicon NPN Power Transistors

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N5612A DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For general-purpose amplifier ; and switching applications
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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