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NTMFS5C612NL даташитФункция этой детали – «Power Mosfet ( Transistor )». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
NTMFS5C612NL | ON Semiconductor |
Power MOSFET ( Transistor ) NTMFS5C612NL
Power MOSFET
60 V, 1.5 mW, 235 A, Single N−Channel
Features
• Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NTMFS5C612NLWF − Wettable Flank Option for Enhanced Optical
Inspection
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJC |
Это результат поиска, начинающийся с "5C612NL", "NTMFS5C61" |
Номер в каталоге | Производители | Описание | |
NVMFS5C612NL | ON Semiconductor |
Power MOSFET ( Transistor ) NVMFS5C612NL
Power MOSFET
60 V, 1.5 mW, 235 A, Single N−Channel
Features
• Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS5C612NLWF − Wettable Flank Option for Enhanced |
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1N5612 | Microsemi |
Voidless Hermetically Sealed Unidirectional Transient Voltage Suppressors 1N5610 thru 1N5613
Available on commercial
versions
Voidless Hermetically Sealed Unidirectional Transient Voltage Suppressors
Qualified per MIL-PRF-19500/434
DESCRIPTION
This series of industry recognized voidless hermetically sealed unidirectional Transient Voltage Suppresso |
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1N5612 | New Jersey Semiconductor |
Diode TVS Single Uni-Dir 49V 1.5KW 2-Pin Case G |
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2N5612 | SavantIC |
(2N5606 - 2N5612) Silicon NPN Power Transistors SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5606 2N5608 2N5610 2N5612
DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For general-purpose amplifier ; and sw |
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2N5612 | Seme LAB |
Bipolar NPN Device 2N5612
Dimensions in mm (inches).
3.68 (0.145) rad.
max.
3.61 (0.142) 4.08(0.161)
rad.
12
6.35 (0.250) 8.64 (0.340)
Bipolar NPN Device in a Hermetically sealed TO66
Metal Package.
Bipolar NPN Device. VCEO = 100V IC = 5A
24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590 |
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2N5612A | SavantIC |
Silicon NPN Power Transistors SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5612A
DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For general-purpose amplifier ; and switching applications |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |