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NTSB30120CTG даташитФункция этой детали – «Very Low Forward Voltage Trench-based Schottky Rectifier». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
NTSB30120CTG | ON Semiconductor |
Very Low Forward Voltage Trench-based Schottky Rectifier NTST30120CT, NTSJ30120CTG, NTSB30120CT-1G, NTSB30120CTG, NTSB30120CTT4G Very Low Forward Voltage Trench-based Schottky Rectifier
Exceptionally Low VF = 0.50 V at IF = 5 A
Features http://onsemi.com
VERY LOW FORWARD VOLTAGE, LOW LEAKAGE SCHOTTKY BARRIER RECTIFIERS 30 AMPERES, 120 VOLTS
PIN CONNECTIONS
1 2, 4 3 4
• Fine Lithography Trench−based Schottky Technology for Very Low • • • • • •
Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability Low Power Loss and Lower Operat |
Это результат поиска, начинающийся с "30120CTG", "NTSB30120" |
Номер в каталоге | Производители | Описание | |
NTSJ30120CTG | ON Semiconductor |
Very Low Forward Voltage Trench-based Schottky Rectifier NTST30120CT, NTSJ30120CTG, NTSB30120CT-1G, NTSB30120CTG, NTSB30120CTT4G Very Low Forward Voltage Trench-based Schottky Rectifier
Exceptionally Low VF = 0.50 V at IF = 5 A
Features http://onsemi.com
VERY LOW FORWARD VOLTAGE, LOW LEAKAGE SCHOTTKY BARRIER RECTIFIERS 30 AMPERES, 120 |
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C4D30120D | Cree |
Silicon Carbide Schottky Diode C4D30120D–Silicon Carbide Schottky Diode
Z-Rec™ Rectifier
Features
VRRM = IF;
TC<135˚C
1200 V = 43 A 192 nC
Qc =
Package
• • • • •
1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching |
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DM130120 | DAVICOM |
15V / 30V Selectable Output & 122 Hi-V Channels Driver IC DM130120
15V / 30V Selectable Output & 122 Hi-V Channels Driver IC
DAVICOM Semiconductor, Inc.
DM130120
15V / 30V Selectable Output & 122 Hi-V Channels Driver IC
DATA SHEET
Preliminary
Doc No: DM130120-11-MCO-DS-P01 July 11, 2016
Preliminary Version: DM130120-11-MCO-DS-P01
July |
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GMS30120 | Hynix Semiconductor |
4-BIT SINGLE CHIP MICROCOMPUTERS $35
5HY
4-BIT SINGLE CHIP MICROCOMPUTERS
GMS300 SERIES
USER`S MANUAL
• GMS30004 • GMS30012 • GMS30112 • GMS30120 • GMS30140 • GMS30000 EVA
INTRODUCTION
We hereby introduce the manual for CMOS 4-bit microcomputer GMS300 Series. This manual is prepared f |
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HUR30120 | Sirectifier Semiconductors |
(HUR30100 / HUR30120) High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode HUR30100, HUR30120
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Dimensions TO-247AC A C(TAB) C
Dim. A B C D E F G H J K L M N
C
Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 |
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HUR30120PT | Sirectifier Semiconductors |
(HUR30100PT / HUR30120PT) High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode HUR30100PT, HUR30120PT
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
A C(TAB) A C A
C
A
Dimensions TO-247AD
Dim. A B C D E F G H
Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 |
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |