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NVTFS4C13N даташит

Функция этой детали – «Power Mosfet ( Transistor )».



Показать результаты поиска

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Номер в каталоге Производители Описание PDF
NVTFS4C13N ON Semiconductor
ON Semiconductor
  Power MOSFET ( Transistor )

NVTFS4C13N Power MOSFET 30 V, 9.4 mW, 40 A, Single N−Channel, m8FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVTFS4C13NWF − Wettable Flanks Product • NVT Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C u
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Это результат поиска, начинающийся с "4C13N", "NVTFS4C"

Номер в каталоге Производители Описание PDF
NTMFS4C13N ON Semiconductor
ON Semiconductor

Power MOSFET ( Transistor )

NTMFS4C13N Power MOSFET Features 30 V, 38 A, Single N−Channel, SO−8 FL • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free an
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NTMFS4C13NT1G ON Semiconductor
ON Semiconductor

Power MOSFET ( Transistor )

NTMFS4C13N Power MOSFET Features 30 V, 38 A, Single N−Channel, SO−8 FL • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free an
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NTMFS4C13NT3G ON Semiconductor
ON Semiconductor

Power MOSFET ( Transistor )

NTMFS4C13N Power MOSFET Features 30 V, 38 A, Single N−Channel, SO−8 FL • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free an
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NTTFS4C13N ON Semiconductor
ON Semiconductor

Power MOSFET ( Transistor )

NTTFS4C13N Power MOSFET 30 V, 38 A, Single N−Channel, m8FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are
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1413 Vishay Siliconix
Vishay Siliconix

Bulk Metal Foil Technology 8 Pin Transistor Outline Hermetic Resistor Network

1413 Vishay Foil Resistors Bulk Metal® Foil Technology 8 Pin Transistor Outline Hermetic Resistor Network The eight pin TO-5 package with a 0.200" pin circle, is the most popular package for uncomplicated networks. This network can contain up to 9, V5X5 resistor chips. Product
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1413 Vishay Siliconix
Vishay Siliconix

Bulk Metal Foil Technology 8 Pin Transistor Outline Hermetic Resistor Network

1413 Vishay Foil Resistors Bulk Metal® Foil Technology 8 Pin Transistor Outline Hermetic Resistor Network The eight pin TO-5 package with a 0.200" pin circle, is the most popular package for uncomplicated networks. This network can contain up to 9, V5X5 resistor chips. Product
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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