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Datasheet NX7314UA Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1NX7314UAInGaAsP MQW FP TOSA

NEC's 1310 nm InGaAsP MQW FP TOSA NX7314UA FOR LONG HAUL 155 Mb/s APPLICATION FEATURES • OPTICAL OUTPUT POWER: Pf = 1.0 mW • LOW THRESHOLD CURRENT Ith = 8 mA TYP @ TC = 25°C • WIDE OPERATING TEMPERATURE RANGE: -40 to +85°C • InGaAs MONITOR PIN-PD • SMALL PACKAGE ø3.8 mm TOSA (Total leng
CEL
CEL
data


NX7 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1NX70Serial Communication Unit

( ) NX70/NX700 Serial Communications Unit (SCU) User Manual Important User Information Solid state equipment has operational characteristics differing from those of electromechanical equipment. Because of these differences, and also because of t
Samsung
Samsung
data
2NX700Serial Communication Unit

( ) NX70/NX700 Serial Communications Unit (SCU) User Manual Important User Information Solid state equipment has operational characteristics differing from those of electromechanical equipment. Because of these differences, and also because of t
Samsung
Samsung
data
3NX7002AKMOSFET, Transistor

NX7002AK 13 February 2013 SO T2 3 60 V, single N-channel Trench MOSFET Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and bene
NXP Semiconductors
NXP Semiconductors
mosfet
4NX7002AKSMOSFET, Transistor

NX7002AKS 60 V, dual N-channel Trench MOSFET Rev. 1 — 1 March 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
NXP Semiconductors
NXP Semiconductors
mosfet
5NX7002AKWMOSFET, Transistor

NX7002AKW 11 July 2012 60 V, single N-channel Trench MOSFET Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features a
NXP Semiconductors
NXP Semiconductors
mosfet
6NX7002BKN-channel Trench MOSFET

SOT23 NX7002BK 60 V, N-channel Trench MOSFET 12 May 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-
NXP Semiconductors
NXP Semiconductors
mosfet
7NX7002BKMN-channel Trench MOSFET

SOT883 NX7002BKM 60 V, N-channel Trench MOSFET 3 December 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features
NXP Semiconductors
NXP Semiconductors
mosfet



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nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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