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OB2279 даташитФункция этой детали – «Current Mode Pwm Controller». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
OB2279 | On-Bright |
Current Mode PWM Controller OB2279
Current Mode PWM ControllerFreq Shuffling with Latch Shutdown
OB2279 is offered in SOP-8 and DIP-8 packages.
GENERAL DESCRIPTION
OB2279 is a highl y integ rated current mode PWM control IC optimized fo r high performance, low standby pow er and cost effe ctive offline fly back converter applications. PWM switching frequenc y at norm al operation is externally programmable and trimmed to tigh t range. At no load or light load condition, t he IC operates in extended ‘bu rst mode’ to minimize switching loss. Lo |
Это результат поиска, начинающийся с "2279", "OB2" |
Номер в каталоге | Производители | Описание | |
1N2279 | Microsemi Corporation |
(1N2xxx) SILICON POWER RECTIFIER |
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AD22279 | Analog Devices |
(AD22279 - AD22281) ACCELERATION DETECTOR FEATURES
Complete acceleration measurement system on a single monolithic IC
Available in ±35 g, ±50 g, or ±70 g output full-scale ranges Full differential sensor and circuitry for high resistance
to EMI/RFI Environmentally robust packaging Complete mechanical and electrical se |
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ATJ2279 | Actions Semiconductor |
highly integrated SOC ATJ227X Datasheet
Latest Version: 1.0
2010-11-26
ATJ227X DATASHEET
Declaration
Circuit diagrams and other information relating to products of Actions Semiconductor Company, Ltd. (“Actions”) are included as a means of illustrating typical applications. Consequently, complet |
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ATJ2279B | Actions Semiconductor |
highly integrated SOC ATJ227X Datasheet
Latest Version: 1.0
2010-11-26
ATJ227X DATASHEET
Declaration
Circuit diagrams and other information relating to products of Actions Semiconductor Company, Ltd. (“Actions”) are included as a means of illustrating typical applications. Consequently, complet |
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HAT2279H | Renesas Technology |
Silicon N Channel Power MOS FET Power Switching
HAT2279H
Silicon N Channel Power MOS FET Power Switching
REJ03G1464-0200 Rev.2.00 Jul 05, 2006
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 9.5 mΩ typ. (at VGS = 10 V) • Lea |
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HAT2279N | Renesas Technology |
Silicon N Channel Power MOS FET Power Switching
HAT2279N
Silicon N Channel Power MOS FET Power Switching
Preliminary Rev.2.00 Jul.05.2005
Features
• High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 9.8 mΩ typ. (at VGS |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |