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OB2279 даташит

Функция этой детали – «Current Mode Pwm Controller».



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Номер в каталоге Производители Описание PDF
OB2279 On-Bright
On-Bright
  Current Mode PWM Controller

OB2279 Current Mode PWM ControllerFreq Shuffling with Latch Shutdown OB2279 is offered in SOP-8 and DIP-8 packages. GENERAL DESCRIPTION OB2279 is a highl y integ rated current mode PWM control IC optimized fo r high performance, low standby pow er and cost effe ctive offline fly back converter applications. PWM switching frequenc y at norm al operation is externally programmable and trimmed to tigh t range. At no load or light load condition, t he IC operates in extended ‘bu rst mode’ to minimize switching loss. Lo
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Это результат поиска, начинающийся с "2279", "OB2"

Номер в каталоге Производители Описание PDF
1N2279 Microsemi Corporation
Microsemi Corporation

(1N2xxx) SILICON POWER RECTIFIER

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AD22279 Analog Devices
Analog Devices

(AD22279 - AD22281) ACCELERATION DETECTOR

FEATURES Complete acceleration measurement system on a single monolithic IC Available in ±35 g, ±50 g, or ±70 g output full-scale ranges Full differential sensor and circuitry for high resistance to EMI/RFI Environmentally robust packaging Complete mechanical and electrical se
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ATJ2279 Actions Semiconductor
Actions Semiconductor

highly integrated SOC

ATJ227X Datasheet Latest Version: 1.0 2010-11-26 ATJ227X DATASHEET Declaration Circuit diagrams and other information relating to products of Actions Semiconductor Company, Ltd. (“Actions”) are included as a means of illustrating typical applications. Consequently, complet
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ATJ2279B Actions Semiconductor
Actions Semiconductor

highly integrated SOC

ATJ227X Datasheet Latest Version: 1.0 2010-11-26 ATJ227X DATASHEET Declaration Circuit diagrams and other information relating to products of Actions Semiconductor Company, Ltd. (“Actions”) are included as a means of illustrating typical applications. Consequently, complet
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HAT2279H Renesas Technology
Renesas Technology

Silicon N Channel Power MOS FET Power Switching

HAT2279H Silicon N Channel Power MOS FET Power Switching REJ03G1464-0200 Rev.2.00 Jul 05, 2006 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 9.5 mΩ typ. (at VGS = 10 V) • Lea
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HAT2279N Renesas Technology
Renesas Technology

Silicon N Channel Power MOS FET Power Switching

HAT2279N Silicon N Channel Power MOS FET Power Switching Preliminary Rev.2.00 Jul.05.2005 Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 9.8 mΩ typ. (at VGS
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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