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RP114K даташитФункция этой детали – «300ma Ldo Regulator». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
RP114K | RICOH electronics |
300mA LDO REGULATOR RP114x SERIES
300mA LDO REGULATOR
NO. EA-236-141222
OUTLINE
The RP114x Series are CMOS-based voltage regulator ICs with high output voltage accuracy, low supply current, low dropout, and high ripple rejection. Each of these voltage regulator ICs consists of a voltage reference unit, an error amplifier, resistors for setting output voltage, a short current limit circuit, a chip enable circuit, and so on.
RP114x features a minimum input voltage from 1.4V and the output voltage, which can be set from 0.8V to 3.6V (in 0. |
Это результат поиска, начинающийся с "114K", "RP1" |
Номер в каталоге | Производители | Описание | |
2SD2114K | ROHM Semiconductor |
High-current Gain MediumPower Transistor (20V/ 0.5A) Transistors
High-current Gain Medium Power Transistor (20V, 0.5A)
2SD2114K / 2SD2144S
FFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO = 12V (Min.) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) FStructure Epitaxial plana |
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2SD2114K | Kexin |
Power Transistor SMD Type
TransistIoCrs
Power Transistor 2SD2114K
Features
High DC current gain. High emitter-base voltage. Low VCE (sat).
+0.12.4 -0.1
SOT-23
2.9+0.1 -0.1
0.4+0.1 -0.1
3
12 0.95+0.1
-0.1
1.9+0.1 -0.1
+0.11.3 -0.1
0.55 0.4
Unit: mm 0.1+0.05
-0.01
+0.10.97 -0.1
Absolute Ma |
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DDTA114KA | Diodes Incorporated |
PNP PRE-BIASED SMALL SIGNAL SC-59 SURFACE MOUNT TRANSISTOR |
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L2SD2114KVLT1 | Leshan Radio Company |
Epitaxial planar type NPN silicon transistor LESHAN RADIO COMPANY, LTD.
Epitaxial planar type
NPN silicon transistor
zFeatures 1) High DC current gain.
hFE = 1200 (Typ.) 2) High emitter-base voltage.
VEBO =12V (Min.) 3) Low VCE (sat).
VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 4) Pb-Free package |
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L2SD2114KVLT1G | Leshan Radio Company |
Epitaxial planar type NPN silicon transistor LESHAN RADIO COMPANY, LTD.
Epitaxial planar type
NPN silicon transistor
zFeatures 1) High DC current gain.
hFE = 1200 (Typ.) 2) High emitter-base voltage.
VEBO =12V (Min.) 3) Low VCE (sat).
VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 4) Pb-Free package |
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L2SD2114KVLT3G | Leshan Radio Company |
NPN silicon transistor Epitaxial planar type
LESHAN RADIO COMPANY, LTD.
NPN silicon transistor
L2SD2114KVLT1G Series
zFeatures 1) High DC current gain.
S-L2SD2114KVLT1G Series
hFE = 1200 (Typ.)
2) High emitter-base voltage. VEBO =12V (Min.)
3
3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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