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RP114K даташит

Функция этой детали – «300ma Ldo Regulator».



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Номер в каталоге Производители Описание PDF
RP114K RICOH electronics
RICOH electronics
  300mA LDO REGULATOR

RP114x SERIES 300mA LDO REGULATOR NO. EA-236-141222 OUTLINE The RP114x Series are CMOS-based voltage regulator ICs with high output voltage accuracy, low supply current, low dropout, and high ripple rejection. Each of these voltage regulator ICs consists of a voltage reference unit, an error amplifier, resistors for setting output voltage, a short current limit circuit, a chip enable circuit, and so on. RP114x features a minimum input voltage from 1.4V and the output voltage, which can be set from 0.8V to 3.6V (in 0.
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Это результат поиска, начинающийся с "114K", "RP1"

Номер в каталоге Производители Описание PDF
2SD2114K ROHM Semiconductor
ROHM Semiconductor

High-current Gain MediumPower Transistor (20V/ 0.5A)

Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S FFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO = 12V (Min.) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) FStructure Epitaxial plana
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2SD2114K Kexin
Kexin

Power Transistor

SMD Type TransistIoCrs Power Transistor 2SD2114K Features High DC current gain. High emitter-base voltage. Low VCE (sat). +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.97 -0.1 Absolute Ma
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DDTA114KA Diodes Incorporated
Diodes Incorporated

PNP PRE-BIASED SMALL SIGNAL SC-59 SURFACE MOUNT TRANSISTOR

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L2SD2114KVLT1 Leshan Radio Company
Leshan Radio Company

Epitaxial planar type NPN silicon transistor

LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 4) Pb-Free package
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L2SD2114KVLT1G Leshan Radio Company
Leshan Radio Company

Epitaxial planar type NPN silicon transistor

LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 4) Pb-Free package
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L2SD2114KVLT3G Leshan Radio Company
Leshan Radio Company

NPN silicon transistor

Epitaxial planar type LESHAN RADIO COMPANY, LTD. NPN silicon transistor L2SD2114KVLT1G Series zFeatures 1) High DC current gain. S-L2SD2114KVLT1G Series hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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