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U10FWJ2C48M даташитФункция этой детали – «Schottky Barrier Rectifier Stack (low Forward Voltage Schottky». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
U10FWJ2C48M | Toshiba Semiconductor |
SCHOTTKY BARRIER RECTIFIER STACK (LOW FORWARD VOLTAGE SCHOTTKY BARRIER DIODE SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION) |
Это результат поиска, начинающийся с "10FWJ2C48M", "U10FWJ2C" |
Номер в каталоге | Производители | Описание | |
10FWJ2C48M | Toshiba Semiconductor |
SCHOTTKY BARRIER RECTIFIER STACK (LOW FORWARD VOLTAGE SCHOTTKY BARRIER DIODE SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION) |
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IS61WV10248ALL | ISSI |
1M x 8 HIGH-SPEED CMOS STATIC RAM IS61WV10248ALL IS61WV10248BLL IS64WV10248BLL
1M x 8 HIGH-SPEED CMOS STATIC RAM
JUNE 2008
FEATURES • High-speed access times:
8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for
greater noise immunity • Easy memory expansio |
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IS61WV10248BLL | ISSI |
1M x 8 HIGH-SPEED CMOS STATIC RAM IS61WV10248ALL IS61WV10248BLL IS64WV10248BLL
1M x 8 HIGH-SPEED CMOS STATIC RAM
JUNE 2008
FEATURES • High-speed access times:
8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for
greater noise immunity • Easy memory expansio |
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IS61WV10248EDBLL | ISSI |
1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM IS61WV10248EDBLL IS64WV10248EDBLL
1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
FEBRUARY 2013
FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for
greater noise immunity � |
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IS62WV10248BLL | Integrated Silicon Solution |
ULTRA LOW POWER CMOS STATIC RAM IS62WV10248BLL
ISSI
MARCH 2006
®
1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
FEATURES
• High-speed access time: 55ns, 70ns • CMOS low power operation: 36 mW (typical) operating 12 µW (typical) CMOS standby • TTL compatible interface levels |
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IS62WV10248DALL | ISSI |
ULTRA LOW POWER CMOS STATIC RAM IS62WV10248DALL/BLL IS65WV10248DALL/BLL
1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
MA Y 2009
FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – 30 mW (typical) operating – 12 µW (typical) CMOS standby • TTL compatible inter |
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |