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XC17S05XL даташитФункция этой детали – «(xc17s00/xl Series) One-time Programmable Configuration Proms». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
XC17S05XL | Xilinx |
(XC17S00/XL Series) One-Time Programmable Configuration PROMs R
DS030 (v1.10) November 18, 2002
Introduction
Spartan™
The family of PROMs provides an easy-to-use, cost-effective method for storing Spartan device configuration bitstreams. When the Spartan device is in Master Serial mode, it generates a configuration clock that drives the Spartan PROM. A short access time after the rising clock edge, data appears on the PROM DATA output pin that is connected to the Spartan device D IN pin. The Spartan device generates the appropriate number of clock pulses to complete the confi |
Это результат поиска, начинающийся с "17S05XL", "XC17S0" |
Номер в каталоге | Производители | Описание | |
1705 | Gilway Technical Lamp |
T-1 Subminiature Lamps T-1¾ Wire Lead
T-1¾ Miniature Flanged
T-1¾ Miniature Grooved
T-1¾ Midget Screw
T-1¾ Bi-Pin
T-1¾ Subminiature Lamps
Line No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 Part No. Wire Lead 1728 1783 2169 8663 1738 |
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2SA1705 | Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors Ordering number:EN3025
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1705/2SC4485
Low-Frequency Power Amplifier Applications
Applications
· Voltage regulators, relay drivers, lamp drivers.
Features
· Adoption of FBET process. · Fast switching speed.
Package Dimensions
uni |
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2SA1705 | ON Semiconductor |
Bipolar Transistor Ordering number : EN3025A
2SA1705
Bipolar Transistor
-50V, -1A, Low VCE(sat), PNP Single NMP
http://onsemi.com
Applicaitons
• Voltage regulators, relay drivers, lamp drivers
Features
• Adoption of FBET process
• Fast switching speed
Specifications
Absolute Maximum Ra |
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2SB1705 | ROHM Semiconductor |
Low frequency amplifier 2SB1705 Transistors
Low frequency amplifier
2SB1705
zApplication Low frequency amplifier Driver zExternal dimensions (Unit : mm)
Each lead has same dimensions
0.4
1.0MAX 0.85 0.7
zFeatures 1) A collector current is large. 2) VCE(sat) ≤ −250mV At IC=−1.5A / IB=−30mA
(3 |
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2SD1705 | Panasonic Semiconductor |
Silicon NPN epitaxial planar type Power Transistors
2SD1705
Silicon NPN epitaxial planar type
Unit: mm
(0.7)
For power switching Complementary to 2SB1154
21.0±0.5
15.0±0.3 11.0±0.2
5.0±0.2 (3.2)
■ Features
• Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward curre |
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2SK1705 | Inchange Semiconductor |
N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1705
DESCRIPTION ·Drain Current ID= 10A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·Fast Switching Speed
APPLICATIONS · Power supplies, converters and power motor controls
ABSOLUTE |
[1]  
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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