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XC17S05XL даташит

Функция этой детали – «(xc17s00/xl Series) One-time Programmable Configuration Proms».



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XC17S05XL Xilinx
Xilinx
  (XC17S00/XL Series) One-Time Programmable Configuration PROMs

R DS030 (v1.10) November 18, 2002 Introduction Spartan™ The family of PROMs provides an easy-to-use, cost-effective method for storing Spartan device configuration bitstreams. When the Spartan device is in Master Serial mode, it generates a configuration clock that drives the Spartan PROM. A short access time after the rising clock edge, data appears on the PROM DATA output pin that is connected to the Spartan device D IN pin. The Spartan device generates the appropriate number of clock pulses to complete the confi
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Это результат поиска, начинающийся с "17S05XL", "XC17S0"

Номер в каталоге Производители Описание PDF
1705 Gilway Technical Lamp
Gilway Technical Lamp

T-1 Subminiature Lamps

T-1¾ Wire Lead T-1¾ Miniature Flanged T-1¾ Miniature Grooved T-1¾ Midget Screw T-1¾ Bi-Pin T-1¾ Subminiature Lamps Line No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 Part No. Wire Lead 1728 1783 2169 8663 1738
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2SA1705 Sanyo Semicon Device
Sanyo Semicon Device

PNP/NPN Epitaxial Planar Silicon Transistors

Ordering number:EN3025 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1705/2SC4485 Low-Frequency Power Amplifier Applications Applications · Voltage regulators, relay drivers, lamp drivers. Features · Adoption of FBET process. · Fast switching speed. Package Dimensions uni
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2SA1705 ON Semiconductor
ON Semiconductor

Bipolar Transistor

Ordering number : EN3025A 2SA1705 Bipolar Transistor -50V, -1A, Low VCE(sat), PNP Single NMP http://onsemi.com Applicaitons • Voltage regulators, relay drivers, lamp drivers Features • Adoption of FBET process • Fast switching speed Specifications Absolute Maximum Ra
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2SB1705 ROHM Semiconductor
ROHM Semiconductor

Low frequency amplifier

2SB1705 Transistors Low frequency amplifier 2SB1705 zApplication Low frequency amplifier Driver zExternal dimensions (Unit : mm) Each lead has same dimensions 0.4 1.0MAX 0.85 0.7 zFeatures 1) A collector current is large. 2) VCE(sat) ≤ −250mV At IC=−1.5A / IB=−30mA (3
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2SD1705 Panasonic Semiconductor
Panasonic Semiconductor

Silicon NPN epitaxial planar type

Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit: mm (0.7) For power switching Complementary to 2SB1154 21.0±0.5 15.0±0.3 11.0±0.2 5.0±0.2 (3.2) ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward curre
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2SK1705 Inchange Semiconductor
Inchange Semiconductor

N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1705 DESCRIPTION ·Drain Current ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed APPLICATIONS · Power supplies, converters and power motor controls ABSOLUTE
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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