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XCV50E-8FG240C даташит

Функция этой детали – «Virtex-e 1.8 V Field Programmable Gate Arrays».



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Номер в каталоге Производители Описание PDF
XCV50E-8FG240C Xilinx
Xilinx
  Virtex-E 1.8 V Field Programmable Gate Arrays

0 R Virtex™-E 1.8 V Field Programmable Gate Arrays 0 0 DS022-1 (v2.2) November 9, 2001 Preliminary Product Specification Features • Fast, High-Density 1.8 V FPGA Family - Densities from 58 k to 4 M system gates - 130 MHz internal performance (four LUT levels) - Designed for low-power operation - PCI compliant 3.3 V, 32/64-bit, 33/ 66-MHz Highly Flexible SelectI/O+™ Technology - Supports 20 high-performance interface standards - Up to 804 singled-ended I/Os or 344 differential I/O pairs for an aggregate bandwi
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Это результат поиска, начинающийся с "50E", "XCV50E-8FG2"

Номер в каталоге Производители Описание PDF
0805CS-150E DELTA
DELTA

WIRE-WOUND CHIP INDUCTOR

1. Part Description 1.1 Part Numbering (Example) ( Ex. ) 0805 C S - 120 E J T S SIZE. 0402 1.0 * 0.5 mm 0603 1.6 * 0.8 mm 0805 2.0 * 1.2 mm 1008 2.5 * 2.0 mm 1206 3.2 * 1.6 mm 1210 3.2 * 2.5 mm SHAPE. C : C SHAPE H : H SHAPE M : MOLDING PROFILE. S: STANDARD T: LOW PROFILE Q:H
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08N50E Fuji Electric
Fuji Electric

FMP08N50E

FMP08N50E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche
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11N50E Philips
Philips

PowerMOS transistors

Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHB11N50E, PHW11N50E SYMBOL
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150EBU02 International Rectifier
International Rectifier

Ultrafast Soft Recovery Diode

Bulletin PD-20741 rev. A 01/01 150EBU02 Ultrafast Soft Recovery Diode Features • Ultrafast Recovery • 175°C Operating Junction Temperature Benefits • Reduced RFI and EMI • Higher Frequency Operation • Reduced Snubbing • Reduced Parts Count trr = 45ns IF(AV) = 150Am
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150EBU04 International Rectifier
International Rectifier

Ultrafast Soft Recovery Diode

Bulletin PD-20744 rev. A 01/01 150EBU04 Ultrafast Soft Recovery Diode Features • Ultrafast Recovery • 175°C Operating Junction Temperature Benefits • Reduced RFI and EMI • Higher Frequency Operation • Reduced Snubbing • Reduced Parts Count trr = 60ns IF(AV) = 150Am
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150EBU04 Vishay Siliconix
Vishay Siliconix

Ultrafast Soft Recovery Diode

150EBU04 Vishay High Power Products Ultrafast Soft Recovery Diode, 150 A FRED PtTM FEATURES • Ultrafast recovery • 175 °C operating junction temperature • Screw mounting only • Lead (Pb)-free plating Cathode Anode RoHS COMPLIANT • Designed and qualified for industri
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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