|
XCV50E-8FG240C даташитФункция этой детали – «Virtex-e 1.8 V Field Programmable Gate Arrays». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
XCV50E-8FG240C | Xilinx |
Virtex-E 1.8 V Field Programmable Gate Arrays 0
R
Virtex™-E 1.8 V Field Programmable Gate Arrays
0 0
DS022-1 (v2.2) November 9, 2001
Preliminary Product Specification
Features
• Fast, High-Density 1.8 V FPGA Family - Densities from 58 k to 4 M system gates - 130 MHz internal performance (four LUT levels) - Designed for low-power operation - PCI compliant 3.3 V, 32/64-bit, 33/ 66-MHz Highly Flexible SelectI/O+™ Technology - Supports 20 high-performance interface standards - Up to 804 singled-ended I/Os or 344 differential I/O pairs for an aggregate bandwi |
Это результат поиска, начинающийся с "50E", "XCV50E-8FG2" |
Номер в каталоге | Производители | Описание | |
0805CS-150E | DELTA |
WIRE-WOUND CHIP INDUCTOR 1. Part Description
1.1 Part Numbering (Example)
( Ex. )
0805 C S - 120 E J T S
SIZE.
0402 1.0 * 0.5 mm 0603 1.6 * 0.8 mm 0805 2.0 * 1.2 mm 1008 2.5 * 2.0 mm 1206 3.2 * 1.6 mm 1210 3.2 * 2.5 mm
SHAPE.
C : C SHAPE H : H SHAPE M : MOLDING
PROFILE.
S: STANDARD T: LOW PROFILE Q:H |
|
08N50E | Fuji Electric |
FMP08N50E FMP08N50E
Super FAP-E3 series
Features
Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche |
|
11N50E | Philips |
PowerMOS transistors Philips Semiconductors
Product specification
PowerMOS transistors Avalanche energy rated
FEATURES
• Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance
PHB11N50E, PHW11N50E
SYMBOL |
|
150EBU02 | International Rectifier |
Ultrafast Soft Recovery Diode Bulletin PD-20741 rev. A 01/01
150EBU02
Ultrafast Soft Recovery Diode
Features • Ultrafast Recovery • 175°C Operating Junction Temperature Benefits • Reduced RFI and EMI • Higher Frequency Operation • Reduced Snubbing • Reduced Parts Count
trr = 45ns IF(AV) = 150Am |
|
150EBU04 | International Rectifier |
Ultrafast Soft Recovery Diode Bulletin PD-20744 rev. A 01/01
150EBU04
Ultrafast Soft Recovery Diode
Features • Ultrafast Recovery • 175°C Operating Junction Temperature Benefits • Reduced RFI and EMI • Higher Frequency Operation • Reduced Snubbing • Reduced Parts Count
trr = 60ns IF(AV) = 150Am |
|
150EBU04 | Vishay Siliconix |
Ultrafast Soft Recovery Diode 150EBU04
Vishay High Power Products
Ultrafast Soft Recovery Diode, 150 A FRED PtTM
FEATURES
• Ultrafast recovery • 175 °C operating junction temperature • Screw mounting only • Lead (Pb)-free plating
Cathode Anode
RoHS
COMPLIANT
• Designed and qualified for industri |
[1]  
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |