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XN01872 даташитФункция этой детали – «SilICon N-channel Enhancement Mosfet». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
XN01872 | Panasonic Semiconductor |
Silicon n-channel enhancement MOSFET
Composite Transistors
XN01872 (XN1872)
Silicon n-channel enhancement MOSFET
Unit: mm
For switching ■ Features
• Two elements incorporated into one package (Source-coupled FETs) • Reduction of the mounting area and assembly cost by one half
3
2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 4 5
0.16+0.10 –0.06
1.50+0.25 –0.05
2.8+0.2 –0.3
2 0.30+0.10 –0.05 10˚
1
■ Basic Part Number
• 2SK0621 (2SK621) × 2
1.1+0.2 –0.1
(0.65)
Parameter Drain-source surrender voltage Gate-sourc |
Это результат поиска, начинающийся с "01872", "XN01" |
Номер в каталоге | Производители | Описание | |
XN01110 | Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor
Composite Transistors
XN1110
Silicon PNP epitaxial planer transistor
Unit: mm
For switching/digital circuits
2.8 -0.3 0.65±0.15
+0.2 +0.25
1.5 -0.05 5
0.65±0.15 1
0.95
2.9 -0.05
q
q
Two elements incorporated into one package. (Emitter-coupled trans |
|
XN01112 | Panasonic Semiconductor |
Silicon PNP epitaxial planar type For switching/digital circuits
Composite Transistors
XN01112 (XN1112)
Silicon PNP epitaxial planar type
Unit: mm
For switching/digital circuits ■ Features
• Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor) • Reduction of the mounting a |
|
XN01114 | Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor
Composite Transistors
XN1114
Silicon PNP epitaxial planer transistor
Unit: mm
For switching/digital circuits
2.8 -0.3 0.65±0.15
+0.2 +0.25
1.5 -0.05 5
0.65±0.15 1
0.95
2.9 -0.05
q
q
Two elements incorporated into one package. (Emitter-coupled trans |
|
XN01119 | Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor
Composite Transistors
XN01119 (XN1119)
Silicon PNP epitaxial planer transistor
Unit: mm
For switching/digital circuits
2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95)
0.16+0.10 –0.06
s Features
q q
3
4
5 1.50+0.25 –0.05 2.8+0.2 –0.3
Two elements incor |
|
XN01210 | Panasonic Semiconductor |
Silicon NPN epitaxial planar type
Composite Transistors
XN01210 (XN1210)
Silicon NPN epitaxial planar type
Unit: mm
For switching/digital circuits ■ Features
• Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor) • Reduction of the mounting a |
|
XN01211 | Panasonic Semiconductor |
Silicon NPN epitaxial planer transistor
Composite Transistors
XN01211 (XN1211)
Silicon NPN epitaxial planer transistor
Unit: mm
For switching/digital circuits
2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95)
0.16+0.10 –0.06
s Features
q q
3
4
5 1.50+0.25 –0.05 2.8+0.2 –0.3
Two elements incor |
[1]  
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |