|
XO3082 даташитФункция этой детали – «Temperature Compensated Crystal Oscillator». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
XO3082 | MTRONPTI |
Temperature Compensated Crystal Oscillator
Model XO3082-000
Temperature Compensated Crystal Oscillator
Electrical Specifications
Nominal Frequency (FO): 10.0MHz Frequency Stability over Temperature: ±1.0ppm Aging Yearly Aging, <± 1ppm 10-Yearls Aging, < ±4ppm Adjustment Method, External, 0 to 5.0VDC Tuning Range, sufficient for 10-years aging Tuning Slope, negative Output (HCMOS) Duty Cycle, 50%, ± 10% Load, 1 gate or 10pF , maximum SSB Phase Noise (maximum) -90dbc/Hz @ 10Hz offset -125dbc/Hz @ 100Hz offset -135dbc/Hz @ 1kHz offset -145d |
Это результат поиска, начинающийся с "3082", "XO3" |
Номер в каталоге | Производители | Описание | |
1N3082 | American Microsemiconductor |
Diode ( Rectifier ) |
|
2SK3082 | Hitachi Semiconductor |
Silicon N Channel MOS FET High Speed Power Switching 2SK3082(L),2SK3082(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-637 (Z) 2nd. Edition May 1998 Features • Low on-resistance RDS(on) = 0.055 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline
LDPAK
4 4
1 1
2
3
2 |
|
2SK3082L | Hitachi Semiconductor |
Silicon N Channel MOS FET High Speed Power Switching 2SK3082(L),2SK3082(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-637 (Z) 2nd. Edition May 1998 Features • Low on-resistance RDS(on) = 0.055 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline
LDPAK
4 4
1 1
2
3
2 |
|
2SK3082S | Hitachi Semiconductor |
Silicon N Channel MOS FET High Speed Power Switching 2SK3082(L),2SK3082(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-637 (Z) 2nd. Edition May 1998 Features • Low on-resistance RDS(on) = 0.055 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline
LDPAK
4 4
1 1
2
3
2 |
|
ADM3082 | Analog Devices |
(ADM3082 -ADM3089) Transceivers
PRELIMINARY TECHNICAL DATA
a
Low-Current (1nA) Shutdown Mode
High-Speed (10Mbps), Fail-Safe, RS-485/RS-422 Transceivers with Slew-Rate-Limiting and ±15kV ESD Protection ADM3082/ADM3085/ADM3088
GENERAL DESCRIPTION
FEATURES Enhanced Slew Rate Limiting for E |
|
C30822 | PerkinElmer Optoelectronics |
(C30807 - C30831) N-Type Silicon PIN Photodetectors N-Type Silicon PIN Photodetectors
C30807, C30808, C30809, C30810, C30822, C30831
EVERYTHING IN A NEW LIGHT.
Description
This family of N-type silicon p-i-n photodiodes is designed for use in a wide variety of broad band low light level applications covering the spectral range fr |
[1]  
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |