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Datasheet XP151A13A0MR Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | XP151A13A0MR | Power MOS FET Shenzhen Tuofeng Semiconductor Technology Co., Ltd
N-Channel Power MOS FET DMOS Structure
Low On-State Resistance : 0.1Ω (max)
Ultra High-Speed Switching Gate Protect Diode Built-in SOT - 23 Package
Applications Notebook PCs Cellular and portable phones On - board power supplies Li - ion battery |  Tuofeng Semiconductor | data |
| 2 | XP151A13A0MR | Power MOSFET, Transistor XP151A13A0MR-G
Power MOSFET
ETR1119_003
■GENERAL DESCRIPTION
The XP151A13A0MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to cou |  Torex Semiconductor | mosfet |
| 3 | XP151A13A0MR-G | Power MOSFET, Transistor XP151A13A0MR-G
Power MOSFET
ETR1119_003
■GENERAL DESCRIPTION
The XP151A13A0MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to cou | Torex Semiconductor | mosfet |
XP1 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | XP1000 | GaAs MMIC Power Amplifier 17.0-24.0 GHz GaAs MMIC Power Amplifier
May 2005 - Rev 05-May-05
P1000 Chip Device Layout
Features
High Linearity Output Amplifier Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 19.0 dB Small Signal Gain +36.0 dBm Third Order Intercept (OIP3)  Mimix Broadband amplifier | | |
| 2 | XP1000-BD | GaAs MMIC Power Amplifier 17.0-24.0 GHz GaAs MMIC Power Amplifier
May 2007 - Rev 02-May-07
P1000-BD Chip Device Layout
Features
High Linearity Output Amplifier Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 19.0 dB Small Signal Gain +36.0 dBm Third Order Intercept (OI Mimix Broadband amplifier | | |
| 3 | XP1001 | GaAs MMIC Power Amplifier 26.0-40.0 GHz GaAs MMIC Power Amplifier
May 2005 - Rev 05-May-05
P1001 Chip Device Layout
Features
High Linearity Wideband Amplifier On-Chip Temperature Compensated Output Power Detector Balanced Design Provides Good Input/Output Match 11.0 dB Small Signal Gain +31.0 dBm Third Order Intercept (OIP Mimix Broadband amplifier | | |
| 4 | XP1003 | GaAs MMIC Power Amplifier 27.0-35.0 GHz GaAs MMIC Power Amplifier
May 2005 - Rev 05-May-05
P1003 Chip Device Layout
Features
Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 15.0 dB Small Signal Gain +34.0 dBm Third Order Intercept (OIP3) 100% On-Wafer RF, DC and Output Mimix Broadband amplifier | | |
| 5 | XP1003-BD | Power Amplifier 27.0-35.0 GHz GaAs MMIC Power Amplifier
April 2007 - Rev 02-Apr-07
P1003-BD
Features
Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 15.0 dB Small Signal Gain +34.0 dBm Third Order Intercept (OIP3) 100% On-Wafer RF, DC and Output Power Testing Mimix Broadband amplifier | | |
| 6 | XP1005 | GaAs MMIC Power Amplifier 35.0-43.0 GHz GaAs MMIC Power Amplifier
May 2005 - Rev 05-May-05
P1005 Chip Device Layout
Features
Excellent Saturated Output Stage Balanced Design Provides Good Output Match 26.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspec Mimix Broadband amplifier | | |
| 7 | XP1005-BD | Power Amplifier XP1005-BD
Power Amplifier 35.0-43.0 GHz
Features
Excellent Saturated Output Stage Balanced Design Provides Good Output Match 26.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power
Testing 100% Commercial-Level Visual Inspection Using
 MA-COM amplifier | |
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| Número de pieza | Descripción | Fabricantes | |
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