Datasheet XP1D874 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	XP1D874	N-channel junction FET Composite Transistors XP1D874 N-channel junction FET Unit: mm For low-frequency impedance conversion For infrared sensor 0.65 2.0±0.1 2.1±0.1 0.425 1.25±0.1 0.425 0.65 s Features q q 1 2 3 5 0.2 Two elements incorporated into one package. (Drain-coupled FETs) Reduction of the mounting ar	Panasonic Semiconductor

XP1D Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
XP1D874	N-channel junction FET Composite Transistors XP1D874 N-channel junction FET Unit: mm For low-frequency impedance conversion For infrared sensor 0.65 2.0±0.1 2.1±0.1 0.425 1.25±0.1 0.425 0.65 s Features q q 1 2 3 5 0.2 Two elements incorporated into one package. (Drain-coupled FETs) Reductio	Panasonic Semiconductor
XP1D873	Silicon N-channel junction FET Composite Transistors XP1D873 Silicon N-channel junction FET Unit: mm 2.1±0.1 0.425 1.25±0.1 0.425 0.2±0.05 0.12 – 0.02 +0.05 For analog switching 0.65 s Features q q q 0.9± 0.1 s Basic Part Number of Element q s Absolute Maximum Ratings Parameter Gate to drain volta	Panasonic Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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