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Datasheet XP1E554 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | XP1E554 | Silicon NPN epitaxial planer transistor Composite Transistors
XP1E554
Silicon NPN epitaxial planer transistor
Unit: mm
2.1±0.1 0.425 1.25±0.1 0.425
0.65
q
q q
0.9± 0.1
q
2SC3757 × 2 elements
1 : Base (Tr1) 2 : Emitter (Tr1) Collector (Tr2)
0 to 0.1
s Basic Part Number of Element
0.7±0.1
0.12 – 0.02
0.2±0.1
s Absolute M |  Panasonic Semiconductor | transistor |
XP1 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | XP1000 | GaAs MMIC Power Amplifier 17.0-24.0 GHz GaAs MMIC Power Amplifier
May 2005 - Rev 05-May-05
P1000 Chip Device Layout
Features
High Linearity Output Amplifier Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 19.0 dB Small Signal Gain +36.0 dBm Third Order Intercept (OIP3)  Mimix Broadband amplifier | | |
| 2 | XP1000-BD | GaAs MMIC Power Amplifier 17.0-24.0 GHz GaAs MMIC Power Amplifier
May 2007 - Rev 02-May-07
P1000-BD Chip Device Layout
Features
High Linearity Output Amplifier Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 19.0 dB Small Signal Gain +36.0 dBm Third Order Intercept (OI Mimix Broadband amplifier | | |
| 3 | XP1001 | GaAs MMIC Power Amplifier 26.0-40.0 GHz GaAs MMIC Power Amplifier
May 2005 - Rev 05-May-05
P1001 Chip Device Layout
Features
High Linearity Wideband Amplifier On-Chip Temperature Compensated Output Power Detector Balanced Design Provides Good Input/Output Match 11.0 dB Small Signal Gain +31.0 dBm Third Order Intercept (OIP Mimix Broadband amplifier | | |
| 4 | XP1003 | GaAs MMIC Power Amplifier 27.0-35.0 GHz GaAs MMIC Power Amplifier
May 2005 - Rev 05-May-05
P1003 Chip Device Layout
Features
Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 15.0 dB Small Signal Gain +34.0 dBm Third Order Intercept (OIP3) 100% On-Wafer RF, DC and Output Mimix Broadband amplifier | | |
| 5 | XP1003-BD | Power Amplifier 27.0-35.0 GHz GaAs MMIC Power Amplifier
April 2007 - Rev 02-Apr-07
P1003-BD
Features
Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 15.0 dB Small Signal Gain +34.0 dBm Third Order Intercept (OIP3) 100% On-Wafer RF, DC and Output Power Testing Mimix Broadband amplifier | | |
| 6 | XP1005 | GaAs MMIC Power Amplifier 35.0-43.0 GHz GaAs MMIC Power Amplifier
May 2005 - Rev 05-May-05
P1005 Chip Device Layout
Features
Excellent Saturated Output Stage Balanced Design Provides Good Output Match 26.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspec Mimix Broadband amplifier | | |
| 7 | XP1005-BD | Power Amplifier XP1005-BD
Power Amplifier 35.0-43.0 GHz
Features
Excellent Saturated Output Stage Balanced Design Provides Good Output Match 26.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power
Testing 100% Commercial-Level Visual Inspection Using
 MA-COM amplifier | |
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