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PDF IXTN32P60P Data sheet ( Hoja de datos )
| Número de pieza | IXTN32P60P | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS | |
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Preliminary Technical Information
PolarPTM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTN32P60P
VDSS
ID25
=
=
≤RDS(on)
- 600V
- 32A
350mΩ
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAR
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
VISOL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
50/60 Hz, RMS
t = 1 minute
IISOL ≤ 1mA
t = 1 second
Mounting torque
Terminal Connection torque
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0V, ID = - 250μA
VGS(th)
VDS = VGS, ID = - 250μA
IGSS VGS = ±20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 125°C
RDS(on)
VGS = -10V, ID = 0.5 • ID25, Note 1
Maximum Ratings
- 600
- 600
±20
±30
- 32
- 90
- 32
3.5
V
V
V
V
A
A
A
J
10
890
-55 ... +150
150
-55 ... +150
300
260
2500
3000
1.5/13
1.3/11.5
30
V/ns
W
°C
°C
°C
°C
°C
V~
V~
Nm/lb.in.
Nm/lb.in.
g
Characteristic Values
Min. Typ. Max.
- 600
V
- 2.5
- 4.5 V
±100 nA
- 50 μA
- 250 μA
350 mΩ
miniBLOC, SOT-227 (IXTN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either source terminal at miniBLOC can
be used as Main or Kelvin Source.
Features
z International standard package
z Rugged PolarPTM process
z Avalanche Rated
z Low package inductance
Applications
z Hight side switching
z Push-pull amplifiers
z DC Choppers
z Automatic test equipment
© 2008 IXYS CORPORATION, All rights reserved
DS99991(05/08)
1 page  
IXTN32P60P
Fig. 13. Maximum Transient Thermal Impedance
1.000
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2008 IXYS CORPORATION, All rights reserved
IXYS REF: T_32P60P(B9) 6-03-08
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXTN32P60P.PDF ] | |
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