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TMU2N60ZG PDF даташит

Спецификация TMU2N60ZG изготовлена ​​​​«TRinno» и имеет функцию, называемую «N-channel MOSFET».

Детали детали

Номер произв TMU2N60ZG
Описание N-channel MOSFET
Производители TRinno
логотип TRinno логотип 

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TMU2N60ZG Даташит, Описание, Даташиты
Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
D-PAK
TMD2N60Z(G)/TMU2N60Z(G)
BVDSS
600V
N-channel MOSFET
ID RDS(on)MAX
2A <4.0W
I-PAK
Device
TMD2N60Z / TMU2N60Z
TMD2N60ZG / TMU2N60ZG
Package
D-PAK/I-PAK
D-PAK/I-PAK
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC = 25
TC = 100
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25
Derate above 25
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking
TMD2N60Z / TMU2N60Z
TMD2N60ZG / TMU2N60ZG
Remark
RoHS
Halogen Free
Symbol
VDSS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ, TSTG
TL
TMD2N60Z(G)/TMU2N60Z(G)
600
±30
2
1.4
8
128
2
5.2
52
0.416
4.5
-55~150
300
Unit
V
V
A
A
A
mJ
A
mJ
W
W/
V/ns
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RqJC
RqJA
May 2012 : Rev0
www.trinnotech.com
TMD2N60Z(G)/TMU2N60Z(G)
2.4
110
Unit
/W
/W
1/6









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TMU2N60ZG Даташит, Описание, Даташиты
TMD2N60Z(G)/TMU2N60Z(G)
Electrical Characteristics : TC=25, unless otherwise noted
Parameter
Symbol
Test condition
Min Typ Max Units
OFF
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 µA 600 --
--
V
Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V
--
IDSS
VDS = 480 V, TC = 125°C
--
-- 1 µA
-- 10 µA
Forward Gate-Source Leakage Current
IGSSF
VGS = 30 V, VDS = 0 V
--
-- 100 µA
Reverse Gate-Source Leakage Current
IGSSR
VGS = -30 V, VDS = 0 V
--
--
-100
µA
ON
Gate Threshold Voltage
Drain-Source On-Resistance
Forward Transconductance (Note 4)
VGS(th)
VDS = VGS, ID = 250 µA
2
--
4
V
RDS(on)
VGS = 10 V, ID = 1.0 A
-- 3.2 4.0 W
gFS VDS = 30 V, ID = 1.0 A -- 5 -- S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 400 --
-- 41 --
-- 7.5 --
pF
pF
pF
SWITCHING
Turn-On Delay Time (Note 4,5)
Turn-On Rise Time (Note 4,5)
Turn-Off Delay Time (Note 4,5)
Turn-Off Fall Time (Note 4,5)
Total Gate Charge (Note 4,5)
Gate-Source Charge (Note 4,5)
Gate-Drain Charge (Note 4,5)
td(on)
VDD = 300 V, ID = 2.0 A,
--
13
--
ns
tr
RG = 25
-- 18 -- ns
td(off)
-- 46 -- ns
tf -- 20 -- ns
Qg VDS = 480V, ID = 2.0 A, -- 9.6 -- nC
Qgs
VGS = 10 V
-- 1.6 -- nC
Qgd -- 4.3 -- nC
SOURCE DRAIN DIODE
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulsed Drain-Source
Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time (Note 4)
Reverse Recovery Charge (Note 4)
IS
ISM
VSD
trr
Qrr
----
----
VGS = 0 V, IS = 2.0 A
VGS = 0 V, IS = 2.0 A
dIF / dt = 100 A/µs
-- -- 2 A
-- -- 8 A
-- -- 1.5 V
-- 241 --
ns
-- 0.8 -- µC
Note :
1. Repetitive rating : Pulse width limited by maximum junction temperature
2. L=59mH, I AS = 2A, VDD = 50V, RG = 25Ω, Starting TJ= 25
3 I SD 2A, di/dt ≤ 200A/µs , VDD ≤ BVDS, Starting TJ= 25
4. Pulse Test :Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
May 2012 : Rev0
www.trinnotech.com
2/6









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TMU2N60ZG Даташит, Описание, Даташиты
4
Top V =15.0V
GS
10.0V
9.0V
3 8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
2 Bottom 4.0V
1
1. T = 25
C
2. 250μs Pulse Test
0
0 5 10 15 20
Drain-Source Voltage, V [V]
DS
TMD2N60Z(G)/TMU2N60Z(G)
V = 30V
DS
250 μs Pulse Test
10
150
25
1
-55
0.1
2468
Gate-Source Voltage, V [V]
GS
10
8
T = 25
J
6
4
2
0
01
V = 10V
GS
V = 20V
GS
234
Drain Current,I [A]
D
5
6
8
V = 0V
GS
250μs Pulse Test
6
4
150
25
2
0
0.0 0.3 0.6 0.9 1.2
Source-Drain Voltage, V [V]
SD
1.5
800
600
400
200
C = C + C (C = shorted)
iss gs gd ds
C =C +C
oss ds gd
C =C
rss gd
C
iss
V =0V
GS
f = 1 MHz
C
oss
C
rss
12
I = 2.0A
D
10
8
6
4
2
0
10-1 100 101
Drain-Source Voltage, V [V]
DS
0
02
May 2012 : Rev0
www.trinnotech.com
V = 300V
DS
V = 120V
DS
V = 480V
DS
468
Total Gate Charge, Q [nC]
G
10 12
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