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PDF TMAN23N50 Data sheet ( Hoja de datos )

Número de pieza TMAN23N50
Descripción N-channel MOSFET
Fabricantes TRinno 
Logotipo TRinno Logotipo



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No Preview Available ! TMAN23N50 Hoja de datos, Descripción, Manual

Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
JEDEC Qualification
BVDSS
500V
TMAN23N50
N-channel MOSFET
ID RDS(on)MAX
23A <0.22W
D
Device
TMAN23N50
Package
TO-3PN
G
Marking
TMAN23N50
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC = 25
TC = 100
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25
Derate above 25
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Symbol
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ, TSTG
TL
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RqJC
RqJA
April 2014 : Rev 0.1
www.trinnotech.com
TMAN23N50
500
±30
23
14.5
92
970
23
34.7
347
2.77
4.5
-55~150
300
TMAN23N50
0.36
62.5
Remark
RoHS
Unit
V
V
A
A
A
mJ
A
mJ
W
W/
V/ns
Unit
/W
/W
1/5

1 page




TMAN23N50 pdf
TO-3PN MECHANICAL DATA
TMAN23N50
Disclaimer :
TRinno technology reserves the right to make changes without notice to products herein to improve reliability, performance, or design.
The information given in this document is believed to be accurate and reliable. However, it shall in no event be regarded as a
guarantee of conditions and characteristics. With respect to any information regarding the application of the device, TRinno
technology hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-
infringement of patent rights of any third party.
April 2014 : Rev 0.1
www.trinnotech.com
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