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PDF CMT06N60 Data sheet ( Hoja de datos )
| Número de pieza | CMT06N60 | |
| Descripción | POWER FIELD EFFECT TRANSISTOR | |
| Fabricantes | ETC | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CMT06N60 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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CMT06N60
POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION
FEATURES
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage-blocking capability
without degrading performance over time. In addition, this
advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy
efficient design also offers a drain-to-source diode with a
fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
!
!
!
!
!
Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS Specified at Elevated Temperature
PIN CONFIGURATION
TO-220/TO-220FP
Front View
SYMBOL
D
12 3
G
S
N-Channel MOSFET
2003/06/19 Preliminary Rev. 1.1
Champion Microelectronic Corporation
Page 1
1 page  
PACKAGE DIMENSION
D
φ
CMT06N60
POWER FIELD EFFECT TRANSISTOR
TO-220
A
c1
PIN 1: GATE
PIN 2: DRAIN
PIN 3: SOURCE
e
b1 b
e1
Front View
R1.50
B
C
R3.18± 0.10
A1
c
Side View
TO-220FP
I
J
A
A1
b
b1
c
c1
D
E
E1
e
e1
F
L
L1
φ
b
b1 b2
e
Front View
K
N
M
R
Side View
Back View
A
B
C
D
E
G
H
I
J
K
M
N
O
P
Q
R
b
b1
b2
e
2003/06/19 Preliminary Rev. 1.1
Champion Microelectronic Corporation
Page 5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet CMT06N60.PDF ] | |
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