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PDF MTN2328M3 Data sheet ( Hoja de datos )
| Número de pieza | MTN2328M3 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | CYStech | |
| Logotipo |  |
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CYStech Electronics Corp.
Spec. No. : C583M3
Issued Date : 2012.01.12
Revised Date : 2013.08.11
Page No. : 1/8
N-CHANNEL MOSFET
MTN2328M3
BVDSS
ID
RDSON@VGS=10V, ID=3A
RDSON@VGS=4.5V, ID=3A
100V
3A
130mΩ(typ)
136mΩ(typ)
Description
The MTN2328M3 is a N-channel enhancement-mode MOSFET.
Features
• Low on-resistance
• High speed switching
• Low-voltage drive
• Easily designed drive circuits
• Pb-free lead plating package
Symbol
MTN2328M3
Outline
SOT-89
G：Gate
S：Source
D：Drain
GD D S
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TA=25°C
Continuous Drain Current @VGS=10V, TA=100°C
Pulsed Drain Current
Total Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
VDSS
VGSS
ID
ID
IDM
PD
Tj; Tstg
Limits
100
±20
3
1.9
12 *1
2.1 *2
-55~+150
Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2%
*2. When the device is surface mounted on 1 in² copper pad of FR-4 board with 2 oz. copper.
Unit
V
V
A
A
A
W
°C
MTN2328M3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Maximum Drain Current vs Junction Temperature
3.5
3
2.5
2
1.5
1
0.5 TA=25°C, VGS=10V
0
25 50 75 100 125 150
Tj, Junction Temperature(°C)
175
Transient Thermal Response Curves
10
Spec. No. : C583M3
Issued Date : 2012.01.12
Revised Date : 2013.08.11
Page No. : 5/8
1
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
1.E-05
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJA(t)
4.RθJA=60°C/W
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
t1, Square Wave Pulse Duration(s)
1.E+00
1.E+01
MTN2328M3
CYStek Product Specification
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MTN2328M3.PDF ] | |
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