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PDF MTN10N40E3 Data sheet ( Hoja de datos )
| Número de pieza | MTN10N40E3 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | CYStech | |
| Logotipo |  |
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CYStech Electronics Corp.
Spec. No. : C586E3
Issued Date : 2011.04.18
Revised Date :
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTN10N40E3
BVDSS : 400V
RDS(ON) : 0.47Ω(typ.)
ID : 10A
Description
The MTN10N40E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
Applications
• Switching Mode Power Supply
Symbol
MTN10N40E3
Outline
TO-220
G：Gate
D：Drain
S：Source
MTN10N40E3
GDS
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C586E3
Issued Date : 2011.04.18
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Reverse Voltage
10000
f=1MHz
Ciss
1000
Brekdown Voltage vs Ambient Temperature
550
500
Coss
100
Crss
10
0
5 10 15 20 25
Drain-to-Source Voltage-VDS(V)
30
Maximum Safe Operating Area
100
10μs
100μs
10 1ms
10ms
100ms
1
Operation in this area is
DC
limited by RDS(ON)
0.1
Single pulse
Tc=25°C; Tj=150°C
0.01
1 10 100
Drain-Source Voltage -VDS(V)
1000
Maximum Drain Current vs Case Temperature
12
10
8
6
4
2
0
25 50 75 100 125 150 175
Case Temperature---TC(°C)
450
400
-100
ID=250μA,
VGS=0V
-50 0 50 100 150
Ambient Temperature-Tj(°C)
200
Gate Charge Characteristics
12
VDS=90V
10
VDS=200V
8 VDS=320V
6
4
2 ID=10A
0
0 5 10 15 20 25 30 35 40
Total Gate Charge---Qg(nC)
MTN10N40E3
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTN10N40E3.PDF ] | |
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