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PDF MTN10N65FPG Data sheet ( Hoja de datos )

Número de pieza MTN10N65FPG
Descripción N-Channel Enhancement Mode Power MOSFET
Fabricantes CYStech 
Logotipo CYStech Logotipo



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CYStech Electronics Corp.
Spec. No. : C725FP
Issued Date : 2009.06.15
Revised Date : 2011.08.15
Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
MTN10N65FPG
BVDSS : 650V
RDS(ON) : 0.82Ω
ID : 10A
Description
The MTN10N65FPG is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220FP package is universally preferred for all commercial-industrial applications
Features
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
Insulating package, front/back side insulating voltage=2500V(AC)
Pb-free lead plating and halogen-free package
Applications
Power Factor Correction
LCD TV Power
Full and Half Bridge Power
Symbol
MTN10N65FPG
Outline
TO-220FP
GGate
DDrain
SSource
MTN10N65FPG
GDS
CYStek Product Specification

1 page




MTN10N65FPG pdf
CYStech Electronics Corp.
Spec. No. : C725FP
Issued Date : 2009.06.15
Revised Date : 2011.08.15
Page No. : 5/10
Characteristic Curves(Cont.)
Capacitance vs Reverse Voltage
10000
f=1MHz
Brekdown Voltage vs Ambient Temperature
800
1000
Ciss 750
Coss
100
10
0
Crss
5 10 15 20 25
Drain-to-Source Voltage-VDS(V)
30
Maximum Safe Operating Area
100
10μ
10 100μs
1ms
10ms
1 100ms
Operation in this area is
limited by RDS(ON)
0.1
DC
Single pulse
Tc=25°C; Tj=150°C
0.01
1 10 100
Drain-Source Voltage -VDS(V)
1000
Maximum Drain Current vs Case Temperature
12
700
650
600
-100
12
10
8
6
4
2
0
0
ID=250μA,
VGS=0V
-50 0 50 100 150
Ambient Temperature-Tj(°C)
200
Gate Charge Characteristics
VDS=130V
VDS=325V
VDS=520V
ID=10A
10 20 30 40 50
Total Gate Charge---Qg(nC)
60
10
8
6
4
2
0
25 50 75 100 125 150 175
Case Temperature---TC(°C)
MTN10N65FPG
CYStek Product Specification

5 Page










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