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Datasheet BAW56T Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1BAW56TSWITCHING DIODE

Transys Electronics LIMITED SOT-523 Plastic-Encapsulated Diodes BAS16T/BAW56T/BAV70T/BAV99T SWITCHING DIODE FEATURES Power dissipation PD: 150 mW (Tamb=25℃) Forward Current IF: Reverse Voltage 75 m A VR: 85 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ SO
Transys
Transys
diode
2BAW56TSwitching Diodes

MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • Halogen free available upon request by adding suffix "-HF" x Ultra-Small Surface Mount Package x For General Purpose Switching Appl
MCC
MCC
diode
3BAW56TSwitching Diode

BAW56T/BAV70T/BAV99T Switching Diode SOT-523 Features — Fast Switching Speed — For General Purpose Switching Applications — High Conductance Dimensions in inches and (millimeters) BAW56T Marking: JD BAV70T Marking: JJ BAV99T Marking: JE Maximum Ratings @TA=25℃ Parameter Reverse voltage Fo
LGE
LGE
diode
4BAW56TSwitching Diode

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Diode BAW56T/BAV70T/BAV99T SWITCHING DIODE FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance BAW56T BAV70 T BAV99T SOT-523 MARKING:JD JD MARKING:JJ JJ MARKING:JE JE
JCET
JCET
diode
5BAW56TFast Switching Diode

BAW56T / BAV70T / BAV99T — Fast Switching Diode August 2015 BAW56T / BAV70T / BAV99T Fast Switching Diode Features • Fast Switching Diodes with Trr < 4.0 nsec • Surface Mount Device at 0.95 mm Maximum Height • MSL 1 per J-STD-020 • Pb Free and RoHS Compliant • Matte Sn Lead Finish •
Fairchild Semiconductor
Fairchild Semiconductor
diode


BAW Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1BAW100SILICON SWITCHING DIODES

BAW100 BAW100G SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES SOT-143 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BAW100 and BAW100G each consist of two electrically isolated high speed silicon switching diodes packaged in an epoxy molded SOT-1
Central Semiconductor
Central Semiconductor
diode
2BAW100Silicon Switching Diode Array

SMD Type Silicon Switching Diode Array BAW100 Features For high-speed switching Electrically insulated diodes Diodes Unit: mm A b s o lu te M a x im u m R a tin g s T a = 2 5 P aram eter R e ve rs e vo lta g e P e a k re ve rs e vo lta g e F orw ard current S urge forw ard current, t = 1 s T o
Kexin
Kexin
diode
3BAW100Silicon Switching Diode Array (For high-speed switching Electrically insulated diodes)

Silicon Switching Diode Array For high-speed switching q Electrically insulated diodes q BAW 100 Type BAW 100 Marking JSs Ordering Code (tape and reel) Q62702-A376 Pin Configuration Package1) SOT-143 Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Surge forward
Siemens Group
Siemens Group
diode
4BAW100GSILICON SWITCHING DIODES

BAW100 BAW100G SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES SOT-143 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BAW100 and BAW100G each consist of two electrically isolated high speed silicon switching diodes packaged in an epoxy molded SOT-1
Central Semiconductor
Central Semiconductor
diode
5BAW101DUAL SURFACE MOUNT SWITCHING DIODE

NEW PRODUCT Features • Fast Switching Speed • High Reverse Breakdown Voltage • Two Electrically Isolated Elements in a Single Compact Package • Low Leakage Current • Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) • "Green" Device (Note 2) BAW101 DUAL SURFACE MOUNT SWITCHING D
Diodes
Diodes
diode
6BAW101Silicon Switching Diode Array

SMD Type Silicon Switching Diode Array BAW101 Features Electrically insulated high-voltage medium-speed diodes Diodes Unit: mm A bsolute M axim um R atings T a = 25 Param eter R everse voltage P eak reverse voltage Forward current Peak forward current Surge forward current, t = 1 s Total power
Kexin
Kexin
diode
7BAW101High Voltage Double Diode

BAW101 High Voltage Double Diode FEATURES z High Switching Speed:Max.50ns. z High Continuous Reverse Voltage:300V. z Electrically Insulated Diodes. Pb Lead-free APPLICATIONS z General application. ORDERING INFORMATION Type No. Marking BAW101 AB SOT-143 Package Code SOT-143 MAXIMUM RATING @
LGE
LGE
diode



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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