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Número de pieza | TIC216M | |
Descripción | Triacs | |
Fabricantes | Inchange Semiconductor | |
Logotipo | ||
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No Preview Available ! INCHANGE Semiconductor
isc Triacs
isc Product Specification
TIC216M
FEATURES
·With TO-220 package
·Sensitive Gate Triacs
·Glass Passivated
·Max IGT of 5 mA (Quadrants 1~3)
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM
VRRM
IT(RMS)
ITSM
Tj
Tstg
Rth(j-c)
Rth(j-a)
Repetitive peak off-state voltage
Repetitive peak reverse voltage
RMS on-state current (full sine wave)TC=70℃
Non-repetitive peak on-state current
Operating junction temperature
Storage temperature
Thermal resistance, junction to case
Thermal resistance, junction to ambient
MIN
600
600
6
60
110
-45~150
2.5
62.5
UNIT
V
V
A
A
℃
℃
℃/W
℃/W
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IDRM Repetitive peak off-state current VD=VDRM, TC=110℃
Ⅰ
IGT Gate trigger current
Ⅱ
Vsupply = 12 V†; RL= 10Ω; tp(g) >20μs
Ⅲ
Ⅳ
IH Holding current
Vsupply = 12 V†, IG= 0 initial ITM= 100mA
Ⅰ
VGT Gate trigger voltage
Ⅱ
Vsupply = 12 V†; RL= 10Ω; tp(g) >20μs
Ⅲ
Ⅳ
VTM On-state voltage
IT= 8.4A; IG= 50mA
MAX
2.0
5
5
5
10
30
2.2
2.2
2.2
3.0
1.7
UNIT
mA
mA
mA
V
V
isc website:www.iscsemi.cn
1 page |
Páginas | Total 1 Páginas | |
PDF Descargar | [ Datasheet TIC216M.PDF ] |
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