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PDF MIXA30W1200TED Data sheet ( Hoja de datos )
| Número de pieza | MIXA30W1200TED | |
| Descripción | XPT IGBT | |
| Fabricantes | IXYS | |
| Logotipo |  |
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Six-Pack
XPT IGBT
Part name (Marking on product)
MIXA30W1200TED
MIXA30W1200TED
VCES = 1200 V
IC25 = 43 A
VCE(sat) = 1.8 V
25, 26
17
NTC
1
2
18
3
4
27, 28
59
6 10
7 11
8 12
15, 16
23, 24
21, 22
19, 20
13, 14
E 72873
Pin configuration see outlines.
Features:
• Easy paralleling due to the positive
temperature coefficient of the on-state
voltage
• Rugged XPT design
(Xtreme light Punch Through) results in:
- short circuit rated for 10 µsec.
- very low gate charge
- square RBSOA @ 3x IC
- low EMI
• Thin wafer technology combined with
the XPT design results in a competitive
low VCE(sat)
• SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
Application:
• AC motor drives
• Solar inverter
• Medical equipment
• Uninterruptible power supply
• Air-conditioning systems
• Welding equipment
• Switched-mode and
resonant-mode power supplies
Package:
• "E2-Pack" standard outline
• Insulated copper base plate
• Soldering pins for PCB mounting
• Temperature sense included
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
20100622b
1-6
1 page  
Inverter T1 - T6
50
VGE = 15 V
40
30
IC
[A] 20
TVJ = 25°C
TVJ = 125°C
10
0
012
VCE [V]
Fig. 1 Typ. output characteristics
50
3
40
IC 30
[A] 20
10 TVJ = 125°C
0 TVJ = 25°C
5 6 7 8 9 10 11 12 13
VGE [V]
Fig. 3 Typ. tranfer characteristics
6
5
4
E
[mJ] 3
RG = 39 Ω
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
2
Eon
Eoff
1
0
0 10 20 30 40 50
IC [A]
Fig. 5 Typ. switching energy vs. collector current
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
MIXA30W1200TED
50
VGE = 15 V
17 V
40 19 V
13 V
11 V
30 TVJ = 125°C
IC
[A] 20
10
9V
0
01234
VCE [V]
Fig. 2 Typ. output characteristics
20
IC = 25 A
VCE = 600 V
15
5
VGE 10
[V]
5
0
0 20 40 60 80
QG [nC]
Fig. 4 Typ. turn-on gate charge
100
4.0
3.5
3.0 Eoff
2.5
E
2.0
[mJ]
1.5
1.0
Eon
IC = 25 A
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
0.5
0.0
20 40 60 80 100 120 140 160
RG [Ω]
Fig. 6 Typ. switching energy vs. gate resistance
20100622b
5-6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MIXA30W1200TED.PDF ] | |
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