|
|
PDF SiA519 Data sheet ( Hoja de datos )
| Número de pieza | SiA519 | |
| Descripción | N- and P-Channel 20-V (D-S) MOSFET | |
| Fabricantes | Tuofeng Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de SiA519 (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
|
No Preview Available !
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
SiA519
N- and P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.040 at VGS = 4.5 V
N-Channel 20
0.065 at VGS = 2.5 V
P-Channel
0.090 at VGS = - 4.5 V
- 20
0.137 at VGS = - 2.5 V
ID (A) Qg (Typ.)
4.2
3.7 nC
3.3
- 2.9
- 2.3
5.3 nC
1
S1
2
G1
D1
3
D2
D1
6
D2
G2
5
2.05 mm S2
4
2.05 mm
DFNWB2*2-6L-A
D1 S2
G1
G2
S1
N-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
VDS 20
- 20
Gate-Source Voltage
VGS ± 12
Unit
V
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
Pulsed Drain Current
Source Drain Current Diode Current
TC = 25 °C
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TA = 25 °C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t5s
Steady State
ID
IDM
IS
PD
TJ, Tstg
Symbol
RthJA
RthJC
4.2 - 2.9
15 - 15
4.5 - 4.5
7.8 7.8
1.9 1.9
- 55 to 150
260
N-Channel
Typ. Max.
52 65
12.5
16
P-Channel
Typ. Max.
52 65
12.5 16
A
W
°C
Unit
°C/W
1
1 page  
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
SiA519
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
ID = 5.5 A
8
6
4
2
VDS = 5 V
VDS = 16 V
VDS = 10 V
1.6
ID = 4.2 A
1.4
VGS = 4.5 V, 2.5 V
1.2
1.0
0.8
0
0
100
246
Qg - Total Gate Charge (nC)
Gate Charge
8
10
TJ = 150 °C
TJ = 25 °C
1
0.1
0
0.2 0.4 0.6
0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.3
1.2
1.1
1.0
ID = 250 µA
0.9
0.8
0.7
0.6
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.12
0.10
0.08
0.06
0.04
ID = 2 A; TJ = 125 °C
ID = 4.2 A; TJ = 125 °C
ID = 2 A; TJ = 25 °C
ID = 4.2 A; TJ = 25 °C
0.02
0.00
012345
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
20
15
10
5
0
0.001 0.01
0.1
1
10 100 1000
Pulse (s)
Single Pulse Power (Junction-to-Ambient)
5
5 Page 
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
SiA519
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
Single Pulse
0.01
10-4
10-3
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 110 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100 1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
Square Wave Pulse Duration (s)
10-2
Normalized Thermal Transient Impedance, Junction-to-Case
10-1
11
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet SiA519.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SiA511DJ | N- and P-Channel 12-V (D-S) MOSFET |  Vishay |
| SiA517DJ | N- and P-Channel 12-V (D-S) MOSFET | Vishay |
| SiA519 | N- and P-Channel 20-V (D-S) MOSFET | Tuofeng Semiconductor |
| SiA519EDJ | N- and P-Channel 20-V (D-S) MOSFET | Vishay |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |