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Datasheet BYV28-200 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BYV28-200 | EPITAXIAL AVALANCHE DIODES BYV28 SERIES
PRV : 50 - 200 Volts Io : 3.5 Amperes
FEATURES :
* High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Very fast recovery * Pb / RoHS Free
MECHANICAL DATA :
* Case : D2A Molded plastic * Epoxy : UL94V-O rate flame |  EIC | diode |
| 2 | BYV28-200 | ULTRAFAST RECOVERY RECTIFIERS BYV28-50-BYV28-600
High-reliability discrete products and engineering services since 1977
ULTRAFAST RECOVERY RECTIFIERS
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating) |  Digitron Semiconductors | rectifier |
| 3 | BYV28-200 | Super Fast Rectifiers Features
Low cost Diffus ed junction Low leakage Low forward voltage drop High current capability Eas ily cleaned with alcohol,Is opropanol and s im ilar s olvents
Mechanical Data
Cas e: JEDEC DO-27,m olded plas tic Term inals : Axial lead ,s olderable per
MIL- STD-202,Method 208 Polarity: Color ban |  LGE | rectifier |
| 4 | BYV28-200 | Ultra fast low-loss controlled avalanche rectifiers www.DataSheet.co.kr
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D118
BYV28 series Ultra fast low-loss controlled avalanche rectifiers
Product specification Supersedes data of 1996 Oct 02 1997 Nov 24
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
Philips Semicond |  NXP Semiconductors | rectifier |
| 5 | BYV28-200 | GLASS PASSIVATED FAST EFFICIENT RECTIFIER BYV28-50 THRU BYV28-200
GLASS PASSIVATED FAST EFFICIENT RECTIFIER
Reverse Voltage - 50 to 200 Volts
D TE *
Case Style G4
Forward Current - 3.5 Amperes
FEATURES
♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Superfast recovery time for high eff |  General Semiconductor | rectifier |
BYV Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BYV-100 | RECTIFIERS Microsemi Corporation rectifier | | |
| 2 | BYV-150 | RECTIFIERS Microsemi Corporation rectifier | | |
| 3 | BYV-50 | RECTIFIERS Microsemi Corporation rectifier | | |
| 4 | BYV10 | Schottky barrier diodes DISCRETE SEMICONDUCTORS
DATA SHEET
fpage
M3D119
BYV10 series Schottky barrier diodes
Product specification Supersedes data of April 1992 1996 May 13
Philips Semiconductors
Product specification
Schottky barrier diodes
FEATURES • Low switching losses • Fast recovery time • Guard ring p NXP Semiconductors diode | | |
| 5 | BYV10-20 | Schottky barrier diodes DISCRETE SEMICONDUCTORS
DATA SHEET
fpage
M3D119
BYV10 series Schottky barrier diodes
Product specification Supersedes data of April 1992 1996 May 13
Philips Semiconductors
Product specification
Schottky barrier diodes
FEATURES • Low switching losses • Fast recovery time • Guard ring p NXP Semiconductors diode | | |
| 6 | BYV10-20 | Diode Schottky 20V 1A 2-Pin SOD-81 New Jersey Semiconductor diode | | |
| 7 | BYV10-30 | Schottky barrier diodes DISCRETE SEMICONDUCTORS
DATA SHEET
fpage
M3D119
BYV10 series Schottky barrier diodes
Product specification Supersedes data of April 1992 1996 May 13
Philips Semiconductors
Product specification
Schottky barrier diodes
FEATURES • Low switching losses • Fast recovery time • Guard ring p NXP Semiconductors diode | |
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