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Datasheet NPT2019 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | NPT2019 | GaN HEMT NPT2019
Preliminary
Gallium Nitride 48V, 25W, DC-6 GHz HEMT
Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology
Features
Suitable for linear and pulsed applications Tunable from DC-6 GHz 48V Operation Industry Standard Plastic Package High Drain Effici | Nitronex | data |
NPT Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | NPT1015B | GaN Wideband Transistor NPT1015B
GaN Wideband Transistor 28 V, 45 W DC - 3.5 GHz
Features
GaN on Si HEMT D-Mode Transistor Suitable for linear and saturated applications Tunable from DC - 3.5 GHz 28 V Operation 12 dB Gain @ 2.5 GHz 54 % Drain Efficiency @ 2.5 GHz 100 % RF Tested Standard met MA-COM transistor | | |
2 | NPT1015B-SMBPPR | GaN Wideband Transistor NPT1015B
GaN Wideband Transistor 28 V, 45 W DC - 3.5 GHz
Features
GaN on Si HEMT D-Mode Transistor Suitable for linear and saturated applications Tunable from DC - 3.5 GHz 28 V Operation 12 dB Gain @ 2.5 GHz 54 % Drain Efficiency @ 2.5 GHz 100 % RF Tested Standard met MA-COM transistor | | |
3 | NPT15 | Press Fit Triac Naina Semiconductor Ltd.
Press Fit Triac ½”, 15 Amps
Features
• Improved glass passivation for high reliability • Exceptional stability at high temperatures • Metric thread type available • Low thermal resistance
NPT15
TO-203/F
Electrical Characteristics (TA = 250C unless otherwise spec Naina Semiconductor triac | | |
4 | NPT2010 | GaN HEMT NPT2010
Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT
Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology
Features
Suitable for linear and saturated applications Tunable from DC-2.2 GHz 48V Operation Industry Standard Package High Drain Efficiency (>60%)
Ap Nitronex data | | |
5 | NPT2018 | GaN HEMT NPT2018
Preliminary
Gallium Nitride 48V, 12.5W, DC-6 GHz HEMT
Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology
Features
Suitable for linear and saturated applications Tunable from DC-6 GHz 48V Operation Industry Standard Plastic Package High Drain E Nitronex data | | |
6 | NPT2019 | GaN HEMT NPT2019
Preliminary
Gallium Nitride 48V, 25W, DC-6 GHz HEMT
Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology
Features
Suitable for linear and pulsed applications Tunable from DC-6 GHz 48V Operation Industry Standard Plastic Package High Drain Effici Nitronex data | | |
7 | NPT2020 | GaN Wideband Transistor NPT2020
GaN Wideband Transistor 48 V, 50 W DC - 3.5 GHz
Features
GaN on Si HEMT Depletion Mode Transistor Suitable for Linear and Saturated Applications Tunable from DC - 3.5 GHz 48 V Operation 13.5 dB Gain at 3.5 GHz 55 % Drain Efficiency at 3.5 GHz 100 % RF Tested S MA-COM transistor | |
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Número de pieza | Descripción | Fabricantes | |
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