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Número de pieza | SSPL6022 | |
Descripción | N-Channel MOSFET | |
Fabricantes | GOOD-ARK | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SSPL6022 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! Main Product Characteristics
VDSS
60V
RDS(on) 20mohm(typ.)
ID 50A
Features and Benefits
TO-220
Advanced Process Technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
Lead free product
SSPL6022
60V N-Channel MOSFET
Marking and Pin
Assignment
Schematic Diagram
Description
These N-Channel enhancement mode power field effect transistors are produced using our
proprietary MOSFET technology. This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching performance, and withstand high energy
pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
switch mode power supplies.
Absolute Max Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V①
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=5.6mH
Avalanche Current @ L=5.6mH
Operating Junction and Storage Temperature Range
Max.
50
35
200
130
1.0
60
± 20
1010
19
-55 to + 175
Units
A
W
W/°C
V
V
mJ
A
°C
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Page 1 of 7
Rev.1.2
1 page Typical Electrical and Thermal Characteristics
SSPL6022
60V N-Channel MOSFET
Figure 5. Maximum Drain Current Vs. Case
Temperature
Figure 6.Typical Capacitance Vs. Drain-to-Source
Voltage
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Page 5 of 7
Rev.1.2
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet SSPL6022.PDF ] |
Número de pieza | Descripción | Fabricantes |
SSPL6022 | N-Channel MOSFET | GOOD-ARK |
SSPL6022 | N-Channel enhancement mode power field effect transistors | Silikron Semiconductor |
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