(PDF) AM9N65P Datasheet - N-Channel MOSFET

Número de pieza	AM9N65P
Descripción	N-Channel MOSFET
Fabricantes	Analog Power
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No Preview Available ! Analog Power N-Channel 650-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • Off-line Power Supplies • Electronic Ballasts • High Power LED Lighting AM9N65P VDS (V) 650 PRODUCT SUMMARY rDS(on) (Ω) 1.7 @ VGS = 10V 1.8 @ VGS = 6V ID(A) 9a DRAIN connected to TAB ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current a TC=25°C ID IDM 9 50 Continuous Source Current (Diode Conduction) TC=25°C IS 9 Power Dissipation TC=25°C PD 150 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 Units V A A W °C Maximum Junction-to-Ambient Maximum Junction-to-Case THERMAL RESISTANCE RATINGS Parameter Symbol RθJA RθJC Maximum 62.5 1 Units °C/W Notes a. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM9N65P_1A 1 page Analog Power Package Information AM9N65P © Preliminary 5 Publication Order Number: DS_AM9N65P_1A 5 Page

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PDF AM9N65P Data sheet ( Hoja de datos )