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Datasheet C3198 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | C3198 | NPN Epitaxial Silicon Transistor C3198 NPN Epitaxial Silicon Transistor
Features
Collector-Emitter Voltage: VCEO=50V Collector Dissipation: PC(max)=625mW
TO-92
Absolute Maximum Ratings (TA=25oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector | Elite | transistor |
2 | C3198 | TRANSISTOR 2SC3198 | TRANSISTOR
q Transistor NPN q Vceo 60V q Ic 0.15A q Potência 0.4W q Caixa TO-92
2SC3198
Transistor NPN. Vceo 60V. Ic 0.15A. Potência 0.4W.
Tensão VCE Corrente IC Potência Ganho HFE
60V 0.15A 0.4W 20
Polaridade (NPN/PNP)
Caixa
Tipo de embalagem
Quantidade por Embalagem
NPN TO-92 B | ETC | transistor |
3 | C3198 | NPN Silicon Epitaxial Planar Transistor ST 2SC3198
NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications.
The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain.
On special request, these transistors can be manufactured in different pin configurations.
TO-92 Plastic Pa | SEMTECH | transistor |
4 | C3198 | NPN Transistor, 2SC3198 | ETC | data |
5 | C3198Y | NPN Transistor, 2SC3198 | ETC | data |
C31 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | C3101 | NPN Transistor, 2SC3101 Mitsubishi Electronics data | | |
2 | C3102 | NPN Transistor, 2SC3102 Mitsubishi Electric Semiconductor data | | |
3 | C3112 | NPN Transistor, 2SC3112 2SC3112
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3112
For Audio Amplifier and Switching Applications
• • • High DC current gain: hFE = 600~3600 High breakdown voltage: VCEO = 50 V High collector current: IC = 150 mA (max) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
C Toshiba Semiconductor data | | |
4 | C3113 | NPN Transistor, 2SC3113 Free Datasheet http://www.datasheet-pdf.com/
Free Datasheet http://www.datasheet-pdf.com/
Free Datasheet http://www.datasheet-pdf.com/
Toshiba Semiconductor data | | |
5 | C3114 | NPN Transistor, 2SC3114 Ordering number:ENN1047C
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1246/2SC3114
www.datasheet4u.com
High-VEBO, AF Amp Applications
Features
· High VEBO. · Wide ASO and highly resistant to breakdown.
Package Dimensions
unit:mm 2003B
[2SA1246/2SC3114]
5.0 4.0 4.0
0.45 0.5
0.45 0.44
0.6 Sanyo Semicon Device data | | |
6 | C3116 | NPN Transistor, 2SC3116 Ordering number:ENN1032B
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1248/2SC3116
160V/700mA Switching Applications
Uses
· Color TV sound output, converters, inverters.
Features
· High breakdown voltage. · Large current capacity. · Using MBIT process
Package Dimensions
unit:mm
2009B
[2 Sanyo data | | |
7 | C3117 | NPN Transistor, 2SC3117 Ordering number:ENN1060C
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1249/2SC3117
160V/1.5A Switching Applications
Uses
· Color TV sound output, converters, inverters.
Package Dimensions
unit:mm 2009B
[2SA1249/2SC3117]
8.0 4.0 2.7
Features
· High breakdown voltage. · L Sanyo Semicon Device data | |
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