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Datasheet SBR352 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | SBR352 | Diode, Rectifier |  American Microsemiconductor | diode |
| 2 | SBR352G | Diode, Rectifier | American Microsemiconductor | diode |
SBR Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | SBR0 | Standard Recovery 1-Phase Silicon Bridge Rectifier Assembly STANDARD RECOVERY 1-PHASE SILICON BRIDGE RECTIFIERS
SBR05 thru SBR30
January 16, 1998
TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com
www.DataSheet.co.kr
© 1997 SEMTECH CORP.
652 MITCHELL ROAD NEWBURY PARK CA 91320
Datasheet pdf - http://www.DataSheet4U.net/
STANDARD RECOVERY 1-  Semtech Corporation rectifier | | |
| 2 | SBR0120S3 | (SBR0120S3 / SBR0120S5) Super barrier rectifier SBR0120S3 SBR0120S5
Using state-of-the-art SBR IC process technology, the following features are made possible in a single device:
Major ratings and characteristics Characteristics Values
IF(AV) Rectangular Waveform VRRM VF@0.1A, TJ=75oC TJ (operating/storage) 0.10 20 0.35 -65 to 125
Units
A V V,  APD rectifier | | |
| 3 | SBR0120S5 | (SBR0120S3 / SBR0120S5) Super barrier rectifier SBR0120S3 SBR0120S5
Using state-of-the-art SBR IC process technology, the following features are made possible in a single device:
Major ratings and characteristics Characteristics Values
IF(AV) Rectangular Waveform VRRM VF@0.1A, TJ=75oC TJ (operating/storage) 0.10 20 0.35 -65 to 125
Units
A V V, APD rectifier | | |
| 4 | SBR0130S3 | (SBR0130S3 / SBR0130S5) Super barrier rectifier SBR0130S3 SBR0130S5
Using state-of-the-art SBR IC process technology, the following features are made possible in a single device:
Major ratings and characteristics Characteristics Values
IF(AV) Rectangular Waveform VRRM VF@0.1A, TJ=75oC TJ (operating/storage) 0.10 30 0.37 -65 to 125
Units
A V V, APD rectifier | | |
| 5 | SBR0130S5 | (SBR0130S3 / SBR0130S5) Super barrier rectifier SBR0130S3 SBR0130S5
Using state-of-the-art SBR IC process technology, the following features are made possible in a single device:
Major ratings and characteristics Characteristics Values
IF(AV) Rectangular Waveform VRRM VF@0.1A, TJ=75oC TJ (operating/storage) 0.10 30 0.37 -65 to 125
Units
A V V, APD rectifier | | |
| 6 | SBR0140S3 | (SBR0140S3 / SBR0140S5) Super barrier rectifier SBR0140S3 SBR0140S5
Using state-of-the-art SBR IC process technology, the following features are made possible in a single device:
Major ratings and characteristics Values Characteristics
IF(AV) Rectangular Waveform VRRM VF@0.1A, TJ=75oC TJ (operating/storage) 0.10 40 0.43 -65 to 125
Units
A V V, APD rectifier | | |
| 7 | SBR0140S5 | (SBR0140S3 / SBR0140S5) Super barrier rectifier SBR0140S3 SBR0140S5
Using state-of-the-art SBR IC process technology, the following features are made possible in a single device:
Major ratings and characteristics Values Characteristics
IF(AV) Rectangular Waveform VRRM VF@0.1A, TJ=75oC TJ (operating/storage) 0.10 40 0.43 -65 to 125
Units
A V V, APD rectifier | |
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