|
|
Datasheet MJE210 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | MJE210 | COMPLEMENTARY SILICON POWER TRANSISTORS MJE200 NPN MJE210 PNP
COMPLEMENTARY SILICON POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE200, MJE210 types are complementary silicon transistors designed for high gain amplifier applications.
MARKING: FULL PART NUMBER
TO-126 CASE
MAXIMUM RATINGS | Central Semiconductor | transistor |
2 | MJE210 | SILICON PNP TRANSISTOR MJE210
SILICON PNP TRANSISTOR
s s
SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR
DESCRIPTION The MJE210 is a silicon epitaxial-base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain aydio amplifier applications.
3 2 1
SOT-32
INTERNAL SCHEMATIC DIAGRAM | ST Microelectronics | transistor |
3 | MJE210 | PNP (COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER) | Samsung | data |
4 | MJE210 | Feature MJE210
MJE210
Feature
• Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz@IC= -100mA (Min.) • Complement to MJE200
1
TO-126 2.Collector 3.Base
1. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbo | Fairchild | data |
5 | MJE210 | 5 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 25 VOLTS 15 WATTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE200/D
Complementary Silicon Power Plastic Transistors
. . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc • H | Motorola Semiconductors | transistor |
MJE Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | MJE105 | 5 Ampere Power Transistor Motorola Semiconductors transistor | | |
2 | MJE105 | 5 Ampere Power Transistor ETC transistor | | |
3 | MJE105K | 5 Ampere Power Transistor ETC transistor | | |
4 | MJE1090 | 5 AMPERE POWER TRANSISTORS New Jersey Semiconductor transistor | | |
5 | MJE1091 | 5 AMPERE POWER TRANSISTORS New Jersey Semiconductor transistor | | |
6 | MJE1092 | 5 AMPERE POWER TRANSISTORS New Jersey Semiconductor transistor | | |
7 | MJE1093 | 5 AMPERE POWER TRANSISTORS New Jersey Semiconductor transistor | |
Esta página es del resultado de búsqueda del MJE210. Si pulsa el resultado de búsqueda de MJE210 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |