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Datasheet BUR51 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BUR51 | Bipolar NPN Device BUR51
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44)
6.35 (0.25) 9.15 (0.36)
1.52 (0.06) 3.43 (0.135)
Bipolar NPN Device in a Hermetically sealed TO3
Metal Package.
38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 0.97 (0.060) 1.10 ( |  Semelab | data |
| 2 | BUR51 | HIGH CURRENT NPN SILICON TRANSISTOR ® BUR51
HIGH CURRENT NPN SILICON TRANSISTOR
s STMicroelectronics PREFERRED SALESTYPE
s NPN TRANSISTOR
DESCRIPTION The BUR51 is a silicon Multiepitaxial Planar NPN transistor in modified Jedec TO-3 metal case, intented for use in switching and linear applications in military and industrial equipme |  STMicroelectronics | transistor |
BUR Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BUR21 | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package BUR21
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
1.47 (0.058) 1.60 (0.063)
29.9 (1.177) 30.4 (1.197)
16.64 (0.655) 17.  Seme LAB data | | |
| 2 | BUR24 | Bipolar NPN Device BUR24
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.9 (1.177) 30.4 (1.197)
22.23 (0.875) max Seme LAB data | | |
| 3 | BUR50 | Bipolar NPN Device BUR50
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.9 (1.177) 30.4 (1.197)
22.23 (0.875) max Seme LAB data | | |
| 4 | BUR51 | Bipolar NPN Device BUR51
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44)
6.35 (0.25) 9.15 (0.36)
1.52 (0.06) 3.43 (0.135)
Bipolar NPN Device in a Hermetically sealed TO3
Metal Package.
38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 0.97 (0.060) 1.10 ( Semelab data | | |
| 5 | BUR51 | HIGH CURRENT NPN SILICON TRANSISTOR ® BUR51
HIGH CURRENT NPN SILICON TRANSISTOR
s STMicroelectronics PREFERRED SALESTYPE
s NPN TRANSISTOR
DESCRIPTION The BUR51 is a silicon Multiepitaxial Planar NPN transistor in modified Jedec TO-3 metal case, intented for use in switching and linear applications in military and industrial equipme STMicroelectronics transistor | | |
| 6 | BUR52 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUR52
DESCRIPTION · Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 250V(Min) ·High Current Capability ·Low Saturation Voltage
: VCE(sat)= 1.0V(Max)@ IC= 25A
APPLICATIONS ·Designed for switching and linear a  Inchange Semiconductor transistor | | |
| 7 | BUR52 | HIGH CURRENT NPN SILICON TRANSISTOR ® BUR52
HIGH CURRENT NPN SILICON TRANSISTOR
s STMicroelectronics PREFERRED SALESTYPE
s NPN TRANSISTOR s MAINTAINS GOOD SWITCHING
PERFORMANCE EVEN WITHOUT NEGATIVE BASE DRIVE
APPLICATIONS s LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION The BUR52 is a silicon Multiepitaxial Planar NPN trans STMicroelectronics transistor | |
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