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PDF BYW51-200 Data sheet ( Hoja de datos )
| Número de pieza | BYW51-200 | |
| Descripción | Ultrafast Rectifier ( Diode ) | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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Ultrafast Rectifier
INCHANGE Semiconductor
BYW51-200
FEATURES
·High surge capacity
·Low Forward Voltage
·Low Leakage Current
·150℃ Operating Junction Temperature
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Dual center tap rectifier suited for switched mode power
supplies and high frequency DC to DC converters
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRWM
VR
IF(AV)
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current Per Diode
Per device
200
10
20
V
A
IF(RMS)
RMS forward current
Nonrepetitive Peak Surge Current
IFSM (Surge applied at rated load conditions half-
wave, single phase, 60Hz)
TJ Junction Temperature
20 A
100 A
150 ℃
Tstg Storage Temperature Range
-65~150 ℃
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BYW51-200.PDF ] | |
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