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PDF MBR7030WT Data sheet ( Hoja de datos )
| Número de pieza | MBR7030WT | |
| Descripción | Power Rectifier | |
| Fabricantes | ON Semiconductor | |
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Hay una vista previa y un enlace de descarga de MBR7030WT (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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MBR7030WT
SWITCHMODEt
Power Rectifier
The SWITCHMODE power rectifier, a state−of−the−art device,
employs the use of the Schottky Barrier principle with a Platinum
barrier metal.
Features
• Dual Diode Construction; Terminals 1 and 3 May Be Connected for
Parallel Operation at Full Rating
• 30 V Blocking Voltage
• Low Forward Voltage Drop
• Guardring for Stress Protection and High dv/dt Capability
• 175°C Operating Junction Temperature
• Pb−Free Package is Available*
Mechanical Characteristics
• Case: Epoxy, Molded. Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight: 4.3 Grams (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• ESD Ratings: Machine Model, B (< 400 V)
Human Body Model, 3B (> 8000 V)
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR, TC = 100°C)
Per Leg
Per Device
VRRM
VRWM
VR
IF(AV)
30
35
70
V
A
Peak Repetitive Forward Current,
(Rated VR, Square Wave,
20 kHz, TC = 100°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
IFRM
IFSM
70
500
A
A
Peak Repetitive Reverse Current
(2.0 ms, 1.0 kHz)
IRRM
2.0
A
Storage Temperature Range
Tstg −55 to +175 °C
Operating Junction Temperature (Note 1) TJ −55 to +175 °C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RqJA.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
70 AMPERES, 30 VOLTS
1
2, 4
3
1
23
TO−247
CASE 340L
STYLE 2
MARKING DIAGRAM
MBR7030WT
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
MBR7030WT
MBR7030WTG
Package
TO−247
TO−247
(Pb−Free)
Shipping
30 Units/Rail
30 Units/Rail
© Semiconductor Components Industries, LLC, 2010
March, 2010 − Rev. 3
1
Publication Order Number:
MBR7030WT/D
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MBR7030WT.PDF ] | |
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