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PDF MJB45H11 Data sheet ( Hoja de datos )
| Número de pieza | MJB45H11 | |
| Descripción | Silicon PNP Power Transistor | |
| Fabricantes | Inchange Semiconductor | |
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isc Silicon PNP Power Transistor
INCHANGE Semiconductor
MJB45H11
DESCRIPTION
·Low Collector-Emitter saturation voltage
·Pb-free package are available
·Fast switching speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·General purpose amplification and switching such as
out or driver stages in applications such as switching
regulators,converters and power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEO Collector-Emitter Voltage
-80 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-10 A
ICP Collector Current-Pulse
PC
Total Power Dissipation
@ Ta=25℃
PC
Total Power Dissipation
@ TC=25℃
TJ Junction Temperature
-20 A
2W
50 W
150 ℃
Tstg Storage Temperature Range
-55~150 ℃
isc website：www.iscsemi.com
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MJB45H11.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
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