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Número de pieza | MJE172G | |
Descripción | Silicon PNP Power Transistor | |
Fabricantes | Inchange Semiconductor | |
Logotipo | ||
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No Preview Available ! INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
MJE172G
DESCRIPTION
·Collector–Emitter Sustaining Voltage—: VCEO(SUS) = -80 V
·DC Current Gain—
: hFE = 30(Min) @ IC= -0.5 A
= 12(Min) @ IC= -1.5 A
·Complement to the NPN MJE182G
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Low power audio amplifier
·Low current high speed switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-80 V
VEBO
Emitter-Base Voltage
-7 V
IC Collector Current-Continuous
-3 A
ICM Collector Current-peak
-6 A
IB Base Current
Collector Power Dissipation
PC
Ta=25℃
Collector Power Dissipation
TC=25℃
Ti Junction Temperature
Tstg Storage Temperature Range
-1
1.5
12.5
150
-65~150
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
10 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 83.4 ℃/W
isc Website:www.iscsemi.com
1 isc & iscsemi is registered trademark
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet MJE172G.PDF ] |
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