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PDF AUIRF1324S Data sheet ( Hoja de datos )
| Número de pieza | AUIRF1324S | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Infineon | |
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AUIRF1324S
AUTOMOTIVE GRADE
AUIRF1324L
Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications.
HEXFET® Power MOSFET
VDSS
RDS(on)
typ.
max.
ID (Silicon Limited)
ID (Package Limited)
24V
1.3m
1.65m
340A
195A
DD
S
G
D2Pak
AUIRF1324S
G
Gate
S
D
G
TO-262
AUIRF1324L
D
Drain
S
Source
Base part number
AUIRF1324L
AUIRF1324S
Package Type
TO-262
D2-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRF1324L
AUIRF1324S
AUIRF1324STRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
340
240
195
1420
300
2.0
± 20
270
See Fig.14,15, 18a, 18b
0.46
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
Parameter
RJC Junction-to-Case
RJA Junction-to-Ambient (PCB Mount), D2 Pak
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Typ.
–––
–––
Max.
0.50
40
Units
°C/W
2015-11-11
1 page  
AUIRF1324S/L
1
0.1
0.01
D = 0.50
0.20
0.10
0.05
0.02
0.01
Ri (°C/W)
J J
1 1
R 1R 1
Ci= iRi
Ci= iRi
R 2R 2
2 2
R3R3
3 3
R 4R 4
4 4
CC
0.0125
0.0822
0.2019
0.2036
I (sec)
0.000008
0.000078
0.001110
0.007197
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Duty Cycle = Single Pulse
0.01
100
0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 14. Avalanche Current vs. Pulse width
5 2015-11-11
5 Page 
AUIRF1324S/L
Qualification Information
Qualification Level
Moisture Sensitivity Level
Machine Model
ESD
Human Body Model
Charged Device Model
RoHS Compliant
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
D2-Pak
TO-262
MSL1
Class M4†
AEC-Q101-002
Class H3A†
AEC-Q101-001
Class C5†
AEC-Q101-005
Yes
† Highest passing voltage.
Revision History
Date
11/11/2015
Updated datasheet with corporate template
Corrected ordering table on page 1.
Comments
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
11
2015-11-11
11 Page | ||
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| PDF Descargar | [ Datasheet AUIRF1324S.PDF ] | |
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