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Número de pieza | BT136S | |
Descripción | TRIAC | |
Fabricantes | JCET | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BT136S (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate Thyristors
BT136S TRIAC
MAIN FEATURES
Symbol
value
IT(RMS)
VDRM/VRRM
ITSM
6
600
25
unit
A
V
A
TO-252-2L
1. ANODE
2. ANODE
3. GATE
GENERAL DESCRIPTION
. Glass passivated triacs in a plastic envelope ,
intended for use in applications requiring
high bidirectional transient andblocking
voltage capability and high thermal cycling performance.
.Typical applications include motor control,
industrial and domestic lighting , heating and static switching.
ABSOLUTE MAXIMUM RATINGS (Ta=25
symbol
IT(RMS) RMS on-state current (full sine wave)
unless otherwise noted)
parameter
D2 PAK/TO-220
ITSM Non repetitive surge peak on-state current (full sine wave, Tj =25℃)
IGM
PG(AV)
Tstg
Tj
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
TC=107℃
t=20ms
t=16.7ms
Tj=125℃
value
6
25
27
2
0.5
-40 to +150
-40 to +125
unit
A
A
A
W
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Rated repetitive peak off-state/reverse voltage
Rated repetitive peak off-state current
On-state voltage
Ⅰ
Gate trigger current
Ⅱ
Ⅲ
Ⅳ
Ⅰ
Gate trigger voltage
Ⅱ
Ⅲ
Ⅳ
Holding current
Symbol
Test conditions
VDRM,VRRM ID=10μA
IDRM, IRRM VD=620V
VTM IT=5A
T2(+), G(+)
IGT
T2(+), G(-)
T2(-), G(-)
VD=12V
RL=100Ω
T2(-), G(+)
T2(+), G(+)
VGT
T2(+), G(-)
T2(-), G(-)
VD=12V
RL=100Ω
T2(-), G(+)
IH IT =100mA IG=20mA
Min Max Unit
600 V
10 μA
1.7 V
10 mA
10 mA
10 mA
- mA
1.45 V
1.45 V
1.45 V
-V
20 mA
www.cj-elec.com
1
D,Oct,2014
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet BT136S.PDF ] |
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