Datasheet 2N5109 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	2N5109	HIGH FREQUENCY TRANSISTOR 2N5109 JAN, JTX, JTXV AVAILABLE CASE 79-02, STYLE 1 TO-39 (TO-205AD) HIGH FREQUENCY TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Co Hector- Base Voltage Emitter-Base Voltage Base Current —Collector Current Continuous @Total Device Dissipation Tq = 75°C(1) De	Motorola Semiconductors	transistor
2	2N5109	NPN RF TRANSISTOR 2N5109 SILICON NPN RF TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAX	Central Semiconductor	transistor
3	2N5109	NPN SILICON HIGH FREQUENCY TRANSISTOR 2N5109 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION: The 2N5109 is a High Frequency Transistor for General Purpose Amplifier Applications. MAXIMUM RATINGS IC 400 mA VCE PDISS 20 V 1.0 W @ TA = 25 OC 2.5 W @ TC = 75 OC 1 = Emitter 2 = Base 3 = Collector CHARACTERISTICS	ASI	transistor
4	2N5109	Type 2N5109 Geometry 1007 Polarity NPN Data Sheet No. 2N5109 Type 2N5109 Geometry 1007 Polarity NPN Qual Level: JAN - JANTXV Features: • • • • VHF-UHF amplifier silicon transistor. Housed in TO-39 case. Also available in chip form using the 1007 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/398 which Semicoa	Semicoa Semiconductor	data
5	2N5109	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1.2 GHz Current-Gain Bandwidth Product @ 50mA Maximum Unilateral Gain = 12dB (typ) @	Microsemi Corporation	transistor

2N5 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	2N5000	NPN Silicon Power Transistor	Texas	transistor
2	2N5000	Trans GP BJT NPN 80V 2A 3-Pin TO-59	New Jersey Semiconductor	data
3	2N5001	PNP Transistor 2 AMP PNP Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) Ratings based on 25˚C case temperature unless otherwise specified mhFiEn mhaFEx @Ic (A) VmCEa(sxat) (V) @(A)IC mfTin (MHz) mPaTx *TC=100°C (W) Package 2N3205 2 40 20 60 Note 1 0.4 Note 1 Note 1 40 TO-59 2N32	SSDI	transistor
4	2N5001	Trans GP BJT PNP 80V 2A 3-Pin TO-59	New Jersey Semiconductor	data
5	2N5002	HIGH SPEED NPN TRANSISTOR	SSDI	transistor
6	2N5002	Type 2N5002 Geometry 9202 Polarity NPN Data Sheet No. 2N5002 Type 2N5002 Geometry 9202 Polarity NPN Qual Level: JAN - JANTXV Features: • • • • Silicon power transistor for use in high speed power switching applications. Housed in a TO-59 case. Also available in chip form using the 9202 chip geometry. The Min and Max limits shown	Semicoa Semiconductor	data
7	2N5002	(2N5002 / 2N5004) NPN POWER SILICON TRANSISTOR TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/534 Devices 2N5002 2N5004 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC IC(3) PT T	Microsemi Corporation	transistor

Esta página es del resultado de búsqueda del 2N5109. Si pulsa el resultado de búsqueda de 2N5109 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.

nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap