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Datasheet PTD2N60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | PTD2N60 | 600V N-Channel MOSFET PTD2N60/PTU2N60
600V N-Channel MOSFET
Features
• 1.9A, 600V, RDS(on) = 4.70Ω @VGS = 10 V • Low gate charge ( typical 9nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability
General Description
This Power MOSFET is produced using PHILOP's advanced pla |  PHILOP | mosfet |
PTD Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | PTD08A006W | 6A 4.75V to 14V Non-Isolated Digital PowerTrain Module (Rev. A) Texas Instruments data | | |
| 2 | PTD08A010W | 10A 4.75 V to 14 V Input Non-Isolated Digital PowerTrain Module (Rev. E) Texas Instruments data | | |
| 3 | PTD08A015W | 15A 4.75 V to 14 V Input Non-Isolated Digital PowerTrain Module (Rev. A) Texas Instruments data | | |
| 4 | PTD08A020W | 20 A 4.75 V to 14 V Non-Isolated Digital PowerTrain Module (Rev. F) Texas Instruments data | | |
| 5 | PTD08A210W | SINGLE 10-A OUTPUT 4.75-V to 14-V INPUT NON-ISOLATED DIGITAL POWERTRAIN Texas Instruments data | | |
| 6 | PTD08D210W | Dual 10A 4.75V to 14V Non-Isolated Digital PowerTrain Module (Rev. B) Texas Instruments data | | |
| 7 | PTD2N60 | 600V N-Channel MOSFET PTD2N60/PTU2N60
600V N-Channel MOSFET
Features
• 1.9A, 600V, RDS(on) = 4.70Ω @VGS = 10 V • Low gate charge ( typical 9nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability
General Description
This Power MOSFET is produced using PHILOP's advanced pla PHILOP mosfet | |
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