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PDF FDPF041N06BL1 Data sheet ( Hoja de datos )
| Número de pieza | FDPF041N06BL1 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
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FDPF041N06BL1
N-Channel PowerTrench® MOSFET
60 V, 77 A, 4.1 mΩ
December 2014
Features
• RDS(on) = 3.5 mΩ ( Typ.) @ VGS = 10 V, ID = 77 A
• Low FOM RDS(on)*QG
• Low Reverse Recovery Charge, Qrr
• Soft Reverse Recovery Body Diode
• Enables Highly Efficiency in Synchronous Rectification
• Fast Switching Speed
• 100% UIL Tested
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor®’s advanced PowerTrench® process that has been tai-
lored to minimize the on-state resistance while maintaining
superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies
• Renewable System
D
GD S
TO-220F
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC, Silicon Limited)
- Continuous (TC = 100oC, Silicon Limited)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
S
FDPF041N06BL1
60
±20
77
55
308
365
6.0
44.1
0.29
-55 to +175
300
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
FDPF041N06BL1
3.4
62.5
Unit
oC/W
©2014 Fairchild Semiconductor Corporation
FDPF041N06BL1 Rev.C0
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 13. Transient Thermal Response Curve
4
0.5
1
0.2
0.1
0.05
0.1 0.02
0.01
Single pulse
0.01
0.001
10-5
10-4
PDM
*Notes:
t1
t2
1. ZθJC(t) = 3.4oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
Rectangular Pulse Duration [sec]
10-1
1
©2014 Fairchild Semiconductor Corporation
FDPF041N06BL1 Rev.C0
5
www.fairchildsemi.com
5 Page | ||
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