Datasheet PZ558EZ Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	PZ558EZ	Dual N-Channel Enhancement Mode MOSFET PZ558EZ Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 3Ω @VGS = 4V ID 0.2A SOT-363 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±16 Continuous Drain Current1 Pulsed Drain Cu	UNIKC	mosfet

PZ5 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	PZ5032	32 macrocell CPLD INTEGRATED CIRCUITS PZ5032 32 macrocell CPLD Product specification IC27 Data Handbook 1997 Feb 20 Philips Semiconductors Free Datasheet http://www.Datasheet4U.com Philips Semiconductors Product specification 32 macrocell CPLD PZ5032 FEATURES • Industry’s first TotalCMOS™ PLD – both C	Philips	data
2	PZ5032-10A44	32 Macrocell PLD Construction Analysis Philips PZ5032-10A44 32 Macrocell PLD Report Number: SCA 9611-501 ® INTEGRATED CIRCUIT ENGINEERING CORPORATION 15022 N. 75th Street • Scottsdale, AZ 85260-2476 Telephone: 602-998-9780 • Fax: 602-948-1925 Free Datasheet http://www.Datasheet4U.com INDEX TO TEXT TITLE I	INTEGRATED CIRCUIT ENGINEERING	data
3	PZ5064	64 Macrpcell CPLD w w w .d e e h s a t a . u t4 m o c	NXP Semiconductors	data
4	PZ509BA	P-Channel Enhancement Mode MOSFET PZ509BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 135mΩ @VGS = -10V ID -1.2A SOT-323 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain	UNIKC	mosfet
5	PZ5128	128 macrocell CPLD INTEGRATED CIRCUITS PZ5128 128 macrocell CPLD Product specification Supersedes data of 1997 Apr 28 IC27 Data Handbook Philips Semiconductors 1997 Aug 12 Philips Semiconductors 128 macrocell CPLD Product specification PZ5128 FEATURES • Industry’s first TotalCMOS™ PLD – both CMOS design a	Philips	data
6	PZ513BA	P-Channel Enhancement Mode MOSFET PZ513BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 115mΩ @VGS = -4.5V ID -1.3A SOT-323 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Continu	UNIKC	mosfet
7	PZ5203EMA	P-Channel Enhancement Mode MOSFET PZ5203EMA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 51mΩ @VGS = -10V ID -3A SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±16 Contin	UNIKC	mosfet
8	PZ5203QV	P&N-Channel Enhancement Mode MOSFET PZ5203QV N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V RDS(ON) 22mΩ @VGS =10V -30V 52mΩ @VGS = -10V ID Channel 7A N -5A P SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS Drain-Source Voltage N 30 VDS P	UNIKC	mosfet
9	PZ558EZ	Dual N-Channel Enhancement Mode MOSFET PZ558EZ Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 3Ω @VGS = 4V ID 0.2A SOT-363 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±16 Continuous Drain Current1 Pulsed Drain Cu	UNIKC	mosfet

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Número de pieza	Descripción	Fabricantes	PDF
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