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PDF APTJC120AM25VCT1AG Data sheet ( Hoja de datos )
| Número de pieza | APTJC120AM25VCT1AG | |
| Descripción | SiC Power Module | |
| Fabricantes | Microsemi | |
| Logotipo |  |
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APTJC120AM25VCT1AG
Phase leg
SiC Power Module
VDSX = 1200V
RDSon = 25 mΩ max @ Tj = 25 °C
ID = 50 A @ Tc = 50 °C
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
•
SiC JFET, Normally off
(4* SJEC120R100 in parallel per switch)
Pins 7/8; 9/10; 11/12 must be shorted
together
• SiC Schottky Diode
(3* SDC10S120 in parallel per switch)
- Zero reverse recovery
- Zero forward recovery
- Temperature-independent switching behavior
- Positive temperature coefficient on VF
• Very low stray inductance
• Internal RC decoupling snubber
• High level of integration
• AlN substrate for improved thermal performance
• Internal thermistor for temperature monitoring
• Semisouth driver board (SGDR2500P2) recommended for this
module)
Benefits
• Outstanding performance at high-frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction-to-case thermal resistance
• Solderable terminals for both power and signal for easy PCB
mounting
• Low profile
• RoHS Compliant
All ratings @ Tj = 25 °C unless otherwise specified
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet APTJC120AM25VCT1AG.PDF ] | |
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