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PDF MT3116 Data sheet ( Hoja de datos )

Número de pieza MT3116
Descripción N-Channel Powe MOSFET
Fabricantes MOS-TECH 
Logotipo MOS-TECH Logotipo



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No Preview Available ! MT3116 Hoja de datos, Descripción, Manual

MOS-TECH Semiconductor Co.,LTD
MT3116
N-Channel Power MOSFET
100V, 176A, 3.5mΩ
Features
• Max RDS(on) = 3.5mΩ at VGS = 10V, ID = 75A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extr emely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
General Description
This N-Channel MOSFET is produced using MOS-TECH
Semiconductor’s advanced PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Applications
• DC-DC primary bridge
• DC-DC Synchronous rectification
• Hot swap
D
G DS
TO-220
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Curren
- Continuous (Silicon Limited)
- Continuous( Package Limited)
- Continuous
- Pulsed
TC = 25oC
TC = 25oC
TC = 25oC(Note 1a)
EAS
PD
TJ, TSTG
Single Pulsed Avalanche Energy
Power Dissipation
- TC = 25oC
- TA = 25oC
Operating and Storage Temperature Range
(Note 3)
(Note 1a)
(Note 1b)
S
Ratings
100
±20
176
120
75
704
1500
380
2.4
-55 to +175
Units
V
V
A
A
mJ
W
W/oC
oC
Thermal Characteristics
Symbol
Parameter
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
MT3116
Device
MT3116
Package
TO-220
(Note 1)
(Note 1a)
Ratings
0.5
62.5
Reel Size
-
Tape Width
-
Units
oC/W
Quantity
50
©2012 MOS-TECH Semiconductor Corporation
1
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1 page




MT3116 pdf
Typical Performance Characteristics
Figure 12. Transient Thermal Response Curve
3
1
0 .5
0 .1
0 .0 1
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
Single pulse
0 .0 0 1
1 0 -5
1 0 -4
PDM
t1
t2
*N otes:
1. ZθJC(t) = 0.66oC /W M ax.
2. D uty Factor, D = t1/t2
3. T JM - T C = P DM * ZθJC(t)
1 0 -3
1 0 -2
1 0 -1
R ectangular P ulse D uration [sec]
1
10
MT3116 Rev. A
5
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