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Datasheet CED540N Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | CED540N | N-Channel Enhancement Mode Field Effect Transistor CED540N/CEU540N
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
100V, 25A, RDS(ON) = 53mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
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CEU SERIES TO-252( | ![]() CET | transistor |
CED Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | CED01N6 | N-Channel Enhancement Mode Field Effect Transistor CED01N6/CEU01N6
N-Channel Enhancement Mode Field Effect Transistor FEATURES
650V, 0.9A, RDS(ON) = 15 Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D
D G S CEU SERIES TO-252(D ![]() CET transistor | | |
2 | CED01N65 | N-Channel Enhancement Mode Field Effect Transistor N-Channel Enhancement Mode Field Effect Transistor FEATURES
650V, 1.2A, RDS(ON) = 10.5Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
CED01N65/CEU01N65
PRELIMINARY
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D G S CE ![]() Chino-Excel Technology transistor | | |
3 | CED01N65A | N-Channel Enhancement Mode Field Effect Transistor N-Channel Enhancement Mode Field Effect Transistor FEATURES
650V, 0.9A, RDS(ON) = 15Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
CED01N65A/CEU01N65A
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D G S CEU SERIES TO- ![]() Chino-Excel Technology transistor | | |
4 | CED01N6G | N-Channel Enhancement Mode Field Effect Transistor N-Channel Enhancement Mode Field Effect Transistor FEATURES
600V, 1A, RDS(ON) = 9.3Ω @VGS = 10V. High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
CED01N6G/CEU01N6G
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D G S CEU SERIES TO-252(D-PAK)
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S CED SERIES TO-251(I-PAK)
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ABSOLUTE M ![]() Chino-Excel Technology transistor | | |
5 | CED01N7 | N-Channel Enhancement Mode Field Effect Transistor N-Channel Enhancement Mode Field Effect Transistor FEATURES
700V, 0.8A, RDS(ON) = 18 Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
CED01N7/CEU01N7
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D G S CEU SERIES TO-252 ![]() Chino-Excel Technology transistor | | |
6 | CED02N6 | N-Channel Logic Level Enhancement Mode Field Effect Transistor CED02N6/CEU02N6
Dec. 2002
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
600V , 1.9A , RDS(ON)=5 Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-251 & TO-252 package.
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CEU SERIES TO-25 ![]() CET transistor | | |
7 | CED02N65A | N-Channel Enhancement Mode Field Effect Transistor CED02N65A/CEU02N65A
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
650V, 1.2A, RDS(ON) = 10.5Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
D
D
G ![]() CET transistor | |
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