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Número de pieza | RU30S4H | |
Descripción | P-Channel Advanced Power MOSFET | |
Fabricantes | Ruichips | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RU30S4H (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! RU30S4H
P-Channel Advanced Power MOSFET
MOSFET
Features
• -30V/-4.8A,
RDS (ON) =50mΩ (Typ.) @ VGS=-10V
RDS (ON) =80mΩ (Typ.) @ VGS=-4.5V
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free and Green Available
Pin Description
SOP-8
Applications
• Power Management.
Absolute Maximum Ratings
Dual P-Channel MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TA=25°C
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested
TA=25°C
ID
PD
②
RθJA
Continuous Drain Current(VGS=-10V)
TA=25°C
TA=70°C
Maximum Power Dissipation
TA=25°C
TA=70°C
Thermal Resistance-Junction to Ambient
Rating
-30
±20
150
-55 to 150
-2.5
①
-18
-4.8
-3.8
2
1.3
62.5
Unit
V
°C
°C
A
A
A
W
°C/W
Copyright© Ruichips Semiconductor Co., Ltd
Rev. B– FEB., 2012
www.ruichips.com
1 page Typical Characteristics
Drain-Source On Resistance
RU30S4H
Source-Drain Diode Forward
Tj - Junction Temperature (°C)
Capacitance
-VSD - Source-Drain Voltage (V)
Gate Charge
-VDS - Drain-Source Voltage (V)
Copyright© Ruichips Semiconductor Co., Ltd
Rev. B– FEB., 2012
5
QG - Gate Charge (nC)
www.ruichips.com
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet RU30S4H.PDF ] |
Número de pieza | Descripción | Fabricantes |
RU30S4H | P-Channel Advanced Power MOSFET | Ruichips |
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