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PDF MDF6N60B Data sheet ( Hoja de datos )
| Número de pieza | MDF6N60B | |
| Descripción | N-Channel Trench MOSFET | |
| Fabricantes | MagnaChip | |
| Logotipo |  |
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MDF6N60B
N-Channel MOSFET 600V, 6A, 1.45Ω
General Description
The MDF6N60B uses advanced MagnaChip’s MOSFET
Technology, which provides low on-state resistance, high
switching performance and excellent quality.
MDF6N60B is suitable device for SMPS, high Speed
switching and general purpose applications.
Features
VDS = 600V
ID = 6.0A
RDS(ON) ≤ 1.4Ω
Applications
Power Supply
PFC
Ballast
@ VGS = 10V
@ VGS = 10V
G DS
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
※ Id limited by maximum junction temperature
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Symbol
VDSS
VGSS
ID
IDM
PD
EAR
dv/dt
EAS
TJ, Tstg
Rating
600
±30
6.0*
3.8*
24*
37.9
0.3
3.79
4.5
220
-55~150
Unit
V
V
A
A
A
W
W/ oC
mJ
V/ns
mJ
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Jan 2012. Version 1.0
1
Symbol
RθJA
RθJC
Rating
62.5
3.3
Unit
oC/W
MagnaChip Semiconductor Ltd.
1 page  
Physical Dimension
3 Leads, TO-220F
Dimensions are in millimeters unless otherwise specified
Symbol
A
b
b1
C
D
E
e
F
G
L
L1
Q
Q1
￠R
Min
4.50
0.63
1.15
0.33
15.47
9.60
2.34
6.48
12.24
2.79
2.52
3.10
3.00
Nom
2.54
Max
4.93
0.91
1.47
0.63
16.13
10.71
2.84
6.90
13.72
3.67
2.96
3.50
3.55
Jan 2012. Version 1.0
5 MagnaChip Semiconductor Ltd.
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MDF6N60B.PDF ] | |
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