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PDF MDFS11N65B Data sheet ( Hoja de datos )
| Número de pieza | MDFS11N65B | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | MagnaChip | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MDFS11N65B (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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MDFS11N65B
N-Channel MOSFET 650V, 12A, 0.65Ω
General Description
These N-channel MOSFET are produced using advanced
MagnaChip’s MOSFET Technology, which provides low on-
state resistance, high switching performance and excellent
quality.
These devices are suitable device for SMPS, high Speed
switching and general purpose applications.
Features
VDS = 650V
ID = 12A
RDS(ON) ≤ 0.65Ω
@ VGS = 10V
@ VGS = 10V
Applications
Power Supply
PFC
High Current, High Speed Switching
D
TO-220FT
G
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
* Id limited by maximum junction temperature
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Jul 2014 Version 1.1
1
Symbol
VDSS
VGSS
ID
IDM
PD
EAR
dv/dt
EAS
TJ, Tstg
Symbol
RθJA
RθJC
S
Rating
650
±30
12*
7.7*
48*
49.6
0.4
18.1
4.5
750
-55~150
Unit
V
V
A
A
A
W
W/oC
mJ
V/ns
mJ
oC
Rating
62.5
2.52
Unit
oC/W
MagnaChip Semiconductor Ltd.
1 page  
Physical Dimensions
3 Leads, TO-220FT (A)
Dimensions are in millimeters unless otherwise specified
Jul 2014 Version 1.1
5 MagnaChip Semiconductor Ltd.
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MDFS11N65B.PDF ] | |
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